Impurity 1 (group VI or II element) is implanted (Fig.5(c)) into the diamond thin film 12 using an ion implanter and then impurity 2 (group III or V element) is implanted (Fig.5(d)).例文帳に追加

ダイヤモンド薄膜１２にイオン注入装置を用い、不純物１（ＶＩ族又はＩＩ族元素）を打ち込む（図５（ｃ））。 - 特許庁

The warps V are expanded in the course of passing from the roller 5 to a warp-regulation mechanism 3 having a width of about 2 m, passed through a wire ring of the warp- regulation mechanism 3 and a reed for beating a weft H, hooked around a roller 7 and wound on a beam 6.例文帳に追加

ローラ５から幅約２ｍの縦糸調節機構３までは縦糸Ｖは広げられて縦糸調節機構３の針金の輪の中に通された後、横糸Ｈを打ち込むおさの中を通されてローラ７に掛けられてビーム６に巻き付けられる。 - 特許庁