転位の集積の英語

羽根車４の制動用弾性羽根４aまたは４bを集積ガイド５とオーバラップする回転位相で停止させておき、集積空間６に進入した紙葉２０aをオーバラップ部の接触抵抗力により停止させる。例文帳に追加

This device is formed so that an elastic vane for braking 4a or 4b of an impeller 4 is stopped at a rotating phase overlapped with a collecting guide 5, and those paper sheets entered into a collecting space 6 are stopped with a contact resistance force caused at an overlapped position. - 特許庁

集積羽根車３３Ａは、集積羽根車検知センサＳＣ３３によって検知され、Ａ搬送路２６又はＢ搬送路２７から繰り出された紙葉類Ｐの繰り出しタイミングに合わせて、当該羽根車３３Ａの羽根と羽根の概略中央でこの紙葉類Ｐを取り込むように集積羽根車３３Ａの回転位置及び速度が設定される。例文帳に追加

The stacking impeller 33A is detected by a staking impeller detection sensor SC33, and the rotating position and speed of the stacking impeller 33A are set in accordance with delivery timing of the paper sheet P delivered from the A carrying path 26 or the B carrying path 27, so as to take in the paper sheet P in an approximately center of blades of the impeller 33A. - 特許庁

集積光学ユニットの回転位置調整の精度を向上させ、作業効率、生産能力を高めることができる光ピックアップ装置及びこの光ピックアップ装置を用いた光ディスク装置を提供する。例文帳に追加

To provide an optical pickup system which can enhance working efficiency and production capability by improving the accuracy of rotational position adjustment of an integrated optical unit and an optical disk device using this optical pickup system. - 特許庁

すなわち、部材に所定の歪みを付与することで、結晶粒の微細化および結晶内に転位の集積する領域の形成が進行し、この微細化した結晶粒の結晶粒界や転位部位に侵入した元素が大量にトラップされることで侵入元素の部材内部への拡散が促進される。例文帳に追加

That is to say, the fining of crystal particles and the formation of areas wherein dislocations accumulate in crystal are enhanced by imparting the prescribed strain to the member, and a large amount of the element intruding into the crystal grain boundaries of fine crystal particles or dislocation parts is trapped, and thereby the diffusion of the element intruding into the inside of the member is accelerated. - 特許庁

ＶＢ法又はＶＧＦ法による半導体結晶成長方法において、成長界面の径方向の温度分布を均一にすることで、結晶内部に対し外周部が早く固化することを防ぎ、成長途中で転位が内部に集積し多結晶化するのを防止可能にする。例文帳に追加

To prevent the solidification at the outer peripheral part from being earlier than that at the inside of a crystal, and to inhibit the generation of polycrystals caused by accumulation of dislocations at the inside during growth of the crystal by uniformizing the temperature distribution in the radial direction of the growth interface, in a semiconductor crystal growth process based on a VB method or a VGF method. - 特許庁

格子緩和ＳｉＧｅ層の貫通転位密度を低減でき、この格子緩和ＳｉＧｅ層上に歪Ｓｉ層或いは歪ＳｉＧｅ層を形成した電界効果トランジスタ及びその製造方法及び集積回路装置を提供することを目的とする。例文帳に追加

To provide a field effect transistor where a distortion Si layer or a distortion SiGe layer is formed on the grid relax SiGe layer and a method for manufacturing this field effect transistor and an integrated circuit device capable of reducing the feedthrough displacement density of the grid relax SiGe layer. - 特許庁