障壁検出器の英語

相互接続電極にもなりうる光検出器アレイ用金属光障壁例文帳に追加

METALLIC LIGHT BARRIER FOR PHOTODETECTOR ALSO SERVING AS INTERCONNECTION ELECTRODE - 特許庁

相互接続電極にもなりうる光検出器アレイ用金属光障壁例文帳に追加

METALLIC OPTICAL BARRIER FOR PHOTO-DETECTOR ARRAY ALSO SERVING AS INTERCONNECTING ELECTRODE - 特許庁

放射線の検出媒体として、不純物を人工的にドープしない高純度ＩｎＳｂ単結晶を用い、かつダイオード特性を得るため、Ａｕ・Ｐｄ合金を用いて表面障壁型電極を形成した半導体放射線検出器を製作する。例文帳に追加

The semiconductor radiation detector which uses a high-purity InSb single crystal with no impurities doped artificially as a detection medium of radiation and having a surface-barrier-type electrode, formed using an Au/Pd alloy to obtain diode characteristics, is manufactured. - 特許庁

放射線の検出媒体として、不純物を人工的にドープしない高純度ＩｎＳｂ単結晶を用い、かつダイオード特性を得るため、Ａｕ−Ｐｄを用いて表面障壁型電極を形成した半導体放射線検出器を製作する。例文帳に追加

The semiconductor radiation detector is manufactured by using a high-purity InSb single crystal in which impurity is not doped artificially as a detection medium of radiation, and in order to obtain diode characteristics, a surface barrier type electrode is formed by using Au-Pd. - 特許庁

２枚の超伝導金属薄膜でトンネル障壁を挟んで構成された超伝導トンネル接合素子４１に電流を流すための電流源４５，４６と、超伝導トンネル接合素子に発生する電圧パルスを検出する電圧検出器４３を備える。例文帳に追加

This device is provided with current sources 45 and 46 for feeding current to a superconducting tunnel junction element 41 composed by sandwiching a tunnel barrier by two superconductive metallic thin films, and a voltage detector 43 detecting voltage pulses occurring in the superconducting tunnel junction element. - 特許庁

１０Ｋ以上の温度でも漏洩電流が小さく、電子あるいは正孔のトラッピングが少なく電荷生成量の多い表面障壁型あるいはｐｎ接合型のＩｎＳｂ単結晶を用いた半導体放射線検出器を製作する。例文帳に追加

To manufacture a semiconductor radiation detector that uses a barrier type, or a InSb single crystal of a p-n junction type that is reduced in leakage current, suppressed in trapping for electrons or holes, and having a large amount of charge generation even at a temperature of 10K or higher. - 特許庁

１０Ｋ以上の温度でも漏洩電流が小さく、電子あるいは正孔のトラッピングが少なく電荷生成量の多い表面障壁型あるいはｐｎ接合型のＩｎＳｂ単結晶を用いた半導体放射線検出器を製作する。例文帳に追加

To provide a semiconductor radiation detector that uses a surface-barrier type or pn junction type InSb single crystal, which has small leakage current at a temperature of 10K or higher, has few electron or hole trappings, and has large amount of charge formation. - 特許庁