P concentrationとは 意味・読み方・使い方

The fourth p-type layer is provided between the second p-type layer and the third p-type layer, and the concentration of the p-type impurity gradually decreases from the second concentration to the third concentration along the direction toward the p-type semiconductor layer from the n-type semiconductor layer.例文帳に追加

第４ｐ形層は第２ｐ形層と第３ｐ形層との間に設けられ、ｐ形不純物の濃度はｎ形半導体層からｐ形半導体層への方向に沿って第２濃度から第３濃度に漸減する。 - 特許庁

The concentration of the primary p-type impurity concentration distribution at the pn junction is higher than that of the secondary p-type impurity concentration distribution at the pn junction.例文帳に追加

第１のｐ型不純物濃度分布のｐｎ接合部での濃度は第２のｐ型不純物濃度分布のｐｎ接合部での濃度よりも高い。 - 特許庁

A semiconductor device has a P-type second low-concentration diffusion region 9 between a P-type low-concentration diffusion region 7 and an N-type low-concentration diffusion region 11.例文帳に追加

Ｐ型低濃度拡散領域７とＮ型低濃度拡散領域１１の間にＰ型第２低濃度拡散領域９を備えている。 - 特許庁

The p emitter region is composed of a low-concentration p-channel region 103 and a high-concentration p^+ emitter region 100.例文帳に追加

そしてｐエミッタ領域を，低濃度のｐチャネル領域１０３と高濃度のｐ^＋エミッタ領域１００とで構成した。 - 特許庁

The source and drain regions 31 include a p-type low concentration impurity region 29 contain relatively low impurity concentration of the first conductivity type and a p-type high concentration impurity region 30 containing relatively high p-type impurity concentration.例文帳に追加

ソースおよびドレイン領域３１は、相対的に第１導電型の不純物濃度が小さいｐ型低濃度不純物領域２９と、相対的にｐ型不純物濃度が大きいｐ型高濃度不純物領域３０とを含む。 - 特許庁

The low resistance n-type semiconductor diamond can be obtained by controlling the lithium atomic concentration C_Li and the phosphorous atomic concentration C_P to be C_Li≤C_P when both of the lithium concentration C_Li and the phosphorous concentration C_P are ≥10^17/cm^3.例文帳に追加

リチウム原子濃度Ｃ_Ｌｉとリン原子濃度Ｃ_Ｐとが共に１０^１７ｃｍ^−３以上であり、Ｃ_Ｌｉ≦Ｃ_Ｐとすれば、低抵抗なｎ型半導体ダイヤモンドを得ることができる。 - 特許庁

Within the p^- diffusion region 5, a plurality of p diffusion regions 20 containing p-type impurities are formed, which have high concentration as compared with the p^- diffusion region 5.例文帳に追加

ｐ^-拡散領域５内には、このｐ^-拡散領域５よりも高濃度のｐ型の不純物を含むｐ拡散領域２０が複数個形成される。 - 特許庁

A real concentration value P_T of the molten iron is determined by subtracting the concentration value P_N due to backlight noises from the concentration value P_M of the peak caused by the molten iron in the concentration histogram, and the temperature of the molten iron is determined using the determined actual concentration value P_T of the molten iron.例文帳に追加

さらに、濃度ヒストグラムにおける溶銑に起因するピークでの濃度値Ｐ_Mから、背光雑音による濃度値Ｐ_Nを減算して溶銑における実際の濃度値Ｐ_Tを求め、求めた溶銑における実際の濃度値Ｐ_Tを用いて、溶銑における温度を求める。 - 特許庁