backward resistanceとは 意味・読み方・使い方

Moreover, this high voltage dummy circuit is provided with a series circuit constituted of plural transistors (TR2-TR7) and a resistance (R) to be operated when the backward voltage is applied.例文帳に追加

逆方向の電圧が印加されたときに動作する複数個のトランジスタ（ＴＲ２〜ＴＲ７）と抵抗（Ｒ）から成る直列回路を備えている。 - 特許庁

To provide a compound semiconductor device increasing the pressure resistance of a backward diode, and also to provide a method of manufacturing the same.例文帳に追加

バックワードダイオードの耐圧を向上させることができる化合物半導体装置及びその製造方法を提供する。 - 特許庁

To provide a semiconductor device which has low on-resistance and sufficient switching characteristics and obtains a high breakdown voltage in both forward and backward directions.例文帳に追加

オン抵抗が低く、スイッチング特性が良好で、順逆両方向で高耐圧が得られる半導体装置を提供する。 - 特許庁

To provide a semiconductor device in which V surge resistance is improved without degrading a Vf-trr (backward recovery period) characteristic.例文帳に追加

Ｖｆ−ｔｒｒ（逆方向回復期間）特性を悪化させずに、Ｖサージ耐量を改善させた半導体装置を提供すること。 - 特許庁

To provide a diamond electronic element which has a small forward resistance, keeps a small backward leakage current, and is kept high in effective efficiency and performance.例文帳に追加

順方向抵抗及び逆方向漏れ電流が小さく、実効効率が高い高性能なダイヤモンド電子素子を提供する。 - 特許庁

To provide a semiconductor device which can aim at an improvement in a backward surge resistance and to provide a method of manufacturing it.例文帳に追加

逆方向サージ耐量の向上を図ることができる半導体装置及びその製造方法を提供する。 - 特許庁

The rotating direction of a joining head 12 of a joining tool 10 is set in the direction where the head rotates from the joining member of the high high-temperature deforming resistance to the joining member of the low high-temperature deforming resistance in the backward side of the joining direction M.例文帳に追加

そして、接合工具10の接合ヘッド12の回転方向を、接合方向Ｍの後方側において、高温変形抵抗の高い接合部材から高温変形抵抗の低い接合部材へと回転する方向に設定する。 - 特許庁

Further, a spark consumption resistance metal part 101 is formed at the central electrode surface layer part positioned at a backward side position in the shaft line direction from the convex part apex P and within 0.5 mm from the backward side of the shaft line direction wherein the tip of the forward side in the shaft line direction of the insulating insulator 1 is made to be the base point.例文帳に追加

さらに、凸部頂点Ｐより軸線方向後方側位置であって、かつ絶縁碍子１の軸線方向前方側の先端を基点とする軸線方向後方側０．５ｍｍ以内の中心電極表層部において、耐火花消耗用金属部１０１が形成される。 - 特許庁