diffracted raysとは 意味・読み方・使い方

A change in scattered or diffracted X rays is suppressed by controlling the crystal structure of a crystal part and the incident azimuth of incident X rays.例文帳に追加

本発明では、結晶部の結晶構造と入射X線の入射方位を制御することで、この散乱または回折X線の変化を抑える。 - 特許庁

Since the diffracted X-rays from the single crystal sample plate 21 are not included in the operation of X-ray intensity, X-ray intensity distribution can be accurately calculated in relation to only the diffracted X-rays from the sample S.例文帳に追加

単結晶試料板２１からの回折Ｘ線がＸ線強度の演算に算入されないので、試料Ｓからの回折Ｘ線だけに関して正確にＸ線強度分布を求めることができる。 - 特許庁

The intensity of diffracted X rays, which are diffracted by an object specimen when applying X rays to the object specimen, is detected on a wide opening angle condition and on a narrow opening angle condition, with a relative ratio between the two taken as "a diffracted X-ray intensity ratio of the object specimen".例文帳に追加

対象試料にＸ線を照射したときに対象試料にて回折した回折Ｘ線の強度を、広い開口角条件と狭い開口角条件にて検出して、両者の相対比を「対象試料の回折Ｘ線強度比」とする。 - 特許庁

Further, the intensity of diffracted X rays, which are diffracted by a reference specimen when X rays are applied to the reference specimen with its crystal completeness assured, is detected on a wide opening angle condition and on a narrow opening angle condition, with a relative ratio between the two taken as "a diffracted X-ray intensity ratio of the reference specimen".例文帳に追加

また結晶の完全性が保証された参照試料にＸ線を照射したときに参照試料にて回折した回折Ｘ線の強度を、広い開口角条件と狭い開口角条件にて検出して、両者の相対比を「参照試料の回折Ｘ線強度比」とする。 - 特許庁

Electric characteristics of a semiconductor wafer are measured, while measuring diffracted rays derived from a prescribed crystal face from a semiconductor single crystal substrate when incident beams of fixed wavelength which cause a diffraction phenomenon due to a semiconductor crystal lattice are incident on a main surface of the semiconductor wafer, and a relation (diffracted rays/characteristic relationship) between measurement information of the diffracted rays and the electric characteristics is determined.例文帳に追加

半導体ウェーハの電気的特性を測定する一方、該半導体ウェーハの主表面に、半導体結晶格子により回折現象を起こしうる一定波長の入射線ビームを入射させたときの、該半導体単結晶基板からの特定結晶面に由来する回折線の測定を行ない、該回折線の測定情報と電気的特性との関係（回折線／特性関係）を決定する。 - 特許庁

On the other hand, 0 order diffracted light λ_02 different from the 1st order diffracted light λ_12 of the rays of light which has passed the grating 12 is made incident on an output place monitoring device 200.例文帳に追加

一方、出力先モニタ装置２００には、グレーティング１２を通過した光のうち、１次回折光λ_１２とは異なる０次回折光λ_０２が入射する。 - 特許庁

A diffraction optical element 13 which generates 0-th diffracted light and ±1st diffracted rays of light, a condenser lens 18, a cylindrical lens 19 and a photo detector 20 are provided as a return-path optical system in the optical system of an optical head 104.例文帳に追加

光ヘッド１０４の光学系１０における復路光学系として、０次回折光及び±１次回折光を発生させる回折光学素子１３と、集束レンズ１７と、シリンドリカルレンズ１８と、光検出器２０とを設ける。 - 特許庁

The coordinate position where the diffracted X-rays issued from the single crystal sample plate 21 are detected by the two-dimensional X-ray detector is recognized as a blank region not allowed to contribute to the operation of the diffracted X-ray intensity distribution.例文帳に追加

単結晶試料板２１から出る回折Ｘ線が２次元Ｘ線検出器２によって検出される座標位置を、回折Ｘ線強度分布の演算に寄与させないブランク領域として認識する。 - 特許庁