intrinsic factorとは 意味・読み方・使い方

lack of intrinsic factor can result in pernicious anemia発音を聞く 例文帳に追加

内因子欠乏は、悪性貧血をもたらす可能性がある - 日本語WordNet

This nonhuman mammalian animal is artificially inhibited from expression of an intrinsic gene which encodes a squalene epoxidase promoting factor (SPF).例文帳に追加

スクアレンエポキシダーゼ促進因子(SPF)をコードする内在性遺伝子の発現が人為的に抑制されていることを特徴とする非ヒト哺乳動物。 - 特許庁

The vibration of a stage 10 is reduced by heightening damping factor of the stage 10 by generating a friction by making a contact body 23 contact the antinode of the intrinsic vibration of the stage.例文帳に追加

ステージ１０の固有振動の腹に接触体２３を摩擦させ、減衰比を高めて振動を低減させる。 - 特許庁

As a result, even if there is a factor that the number of revolutions of the disk deviates from the intrinsic number of revolutions, a period when the disk is rotated at the intrinsic number of revolutions is disposed and the wobbles are detected in this period, by which the accuracy of discriminating the recording disk and the reproduction-only disk is improved.例文帳に追加

これによりディスクの回転数が本来の回転数からずれる要因があってもディスクが本来の回転数で回転される期間を設け、この期間でウォブル検出を行わせて記録用ディスクと再生専用ディスクとの判別精度を向上させる。 - 特許庁

Another major factor allowing smaller enterprises to compensate their employees according to their “intrinsic abilities” is that, provided that former colleagues are still present in the workplace when a woman returns from parental leave, employers can still tell how well she used to work when she returns to the workplace.例文帳に追加

また、一時的に育児などのために離職しても、職場復帰した時、休業前の「仕事の出来」を知っている同僚がいれば、その人の「本来の能力」に基づいた処遇を行うための大きな要素となると言えよう。 - 経済産業省

By preventing substances from entering the oxide semiconductor film, which include hydrogen atoms such as hydrogen, water, a hydroxyl group, or hydride serving as a factor of causing the variation in electrical characteristics of the transistor including the oxide semiconductor, the oxide semiconductor film can be highly purified and be made i-type (intrinsic) electrically.例文帳に追加

酸化物半導体を用いたトランジスタにとって電気的特性の変動要因となる水素、水、水酸基または水素化物などの水素原子を含む物質が、酸化物半導体膜へ混入するのを防止することにより、酸化物半導体膜を高純度化および電気的にｉ型（真性）化することができる。 - 特許庁

By this method, a solar cell satisfying a single p-i-n junction having a single-intrinsic amorphous silicon layer having a thickness of 800 to 2,200 Å and having an open circuit voltage of a range from 0.887 V to 0.986 V and a fill factor of a range from 0.645 to 0.74 is manufactured.例文帳に追加

本方法により８００〜２２００Åの厚みの単−真性アモルファスシリコン層を有する単ｐ−ｉ−ｎ接合を具備し、０．８８７V〜０．９８６Vの範囲の開放電圧及び０．６４５〜０．７４の範囲の曲線因子を有する太陽電池を作製する。 - 特許庁