junction isolationとは 意味・読み方・使い方

To provide a semiconductor device capable of appropriately avoid the reduction in isolation withstand voltage without accompanying any bad influence such as junction capacitance increase, and a method of manufacturing the same.例文帳に追加

接合容量の増加等の弊害を伴わずに分離耐圧の低下を適切に回避し得る、半導体装置及びその製造方法を得る。 - 特許庁

To provide a method for manufacturing a semiconductor element, capable of suppressing a junction leakage current in an element isolation insulating film.例文帳に追加

素子分離絶縁膜における接合リーク電流を抑えることができ半導体素子の製造方法を提供する。 - 特許庁

To provide a high-efficiency solar cell by improving insulation resistance by shortening the peripheral length of a junction isolation portion.例文帳に追加

接合分離部の周囲長を短くして絶縁抵抗を改善し、高効率の太陽電池を提供する。 - 特許庁

A P-type diffusion region 44 is formed on a surface of the substrate 21, which is under each circuit element so that the region 44 will play the role of junction isolation.例文帳に追加

各回路素子の下部の基板２１表面にＰ型の拡散領域４４を形成し、接合分離の役割を果たす。 - 特許庁

P-type diffusion regions 44 are formed on the surface of the substrate 21 below the respective circuit elements and serve as junction isolation.例文帳に追加

各回路素子の下部の基板２１表面にＰ型の拡散領域４４を形成し、接合分離の役割を果たす。 - 特許庁

Thus if the channel stop doped region is formed by self-alignment only in the lower part of the isolation region, the isolation characteristics between unit cells can be improved and the junction leakage current can be reduced.例文帳に追加

このように自己整列的に分離領域の下部にのみチャンネルストップ不純物領域を形成すれば単位セル間の分離特性を向上させかつ接合漏れ電流を減らせる。 - 特許庁

To prevent the occurrence of junction leaks caused by misalignment in a connecting hole opening process in a highly integrated semiconductor device using a shallow trench isolation structure for element isolation.例文帳に追加

シャロートレンチアイソレーション構造の素子分離を用いた高集積度半導体装置において、接続孔開口工程のミスアライメントに起因する接合リークを低減する。 - 特許庁

The solid-state image-sensing device comprises a pn-junction sensor part 111, a device isolation layer for trench isolation for isolating the sensor part into pixels, and a semiconductor region formed protruding from the device isolation layer toward the sensor part and having a conductivity type opposite to that of a charge accumulation region of the sensor part.例文帳に追加

固体撮像装置は、ｐｎ接合型のセンサ部と、センサ部を画素分離するトレンチ分離による素子分離層と、素子分離層からセンサ部側に張出して形成されたセンサ部の電荷蓄積領域とは逆導電型の半導体領域とを有する。 - 特許庁