porous pitとは 意味・読み方・使い方

When the cleaning seepage water W3 reaches the lower end of the storage part 14a, it is discharged into a water collecting and draining pit 16b through a porous pipe 28b and is collected in the lower end of the water collecting and draining pit 16b.例文帳に追加

洗浄浸出水Ｗは、貯槽部１４ａの下端に到達すると、有孔パイプ２８ｂを介して、集排水ピット１６ｂに排出され、この集排水ピット１６ｂの下端に集水される。 - 特許庁

An air spouting disk 7 consisting of a porous material is disposed at the bottom of a separation pit 3 and a multiple microbe culture solution is supplied from a sink of a kitchen to the separation pit in such a state that air bubbles are discharged from the air spouting disk 7 with the frequency of once or more times a day.例文帳に追加

分離マス３の底部に多孔質材料からなる噴気盤７を設置し、噴気盤７から気泡を放出した状態で、１日１回以上の頻度で厨房の流しから複合微生物培養液を供給する。 - 特許庁

A lid plate 26 consisting of a porous plate is set on the sludge discharge pit 21 to which sedimented sludge 22 is scraped, and a sludge discharge port 24 for extracting sludge under the lid plate 26.例文帳に追加

沈殿した汚泥２２が掻き寄せられる排泥ピット２１に多孔板からなる蓋板２６を設置し、該蓋板２６の下方に汚泥抜取り用の排泥口２５を設ける。 - 特許庁

A water-collecting pit (3) for storing the rain water falling on the high level road (1) through an aqueduct (2) is installed in the site under the elevating structure, and the stored rain water is introduced to a U-slot made of a porous concrete, and installed along a retaining wall (6) of a service road (5).例文帳に追加

高架道路（１）上の雨水を、導水管（２）を介して収納する集水桝（３）を高架下に設け、収納した雨水を、給水管（４）により、側道（５）の擁壁（６）に沿って設けた多孔コンクリート製のＵ字溝（７）に導入する。 - 特許庁

This discharge sludge pit 10 includes: a box-shaped body part 20; an insert hole 40 for inserting a rod (a porous pipe) of a soil improvement machine and passing mud jetted from the ground; a projecting pipe 50 projected downward from the insert hole 40; a discharge opening 50 for discharging the mud; and a sweeping opening 60 for discharging sludge.例文帳に追加

排泥ピット１０は、箱状の本体部２０と、地盤改良機のロッド（例えば、多孔管）を挿通すると共に地盤から噴出する泥土を通過させるための挿通孔４０と、挿通孔４０から下方へ向かって突出した突出管５０と、泥土を排出するための掃出口６０とを備える。 - 特許庁

To provide a nitride-semiconductor film forming substrate suitable for the nitride-semiconductor film formation, capable of solving a problem of a pit caused by thermal stresses due to thermal expansion coefficient difference and structural change of porous silicon, and reducing warping and stress generated in the coating, during the formation of the nitride-semiconductor film on a silicon substrate.例文帳に追加

シリコン基板上への窒化物半導体薄膜の形成時における、熱膨張係数差から生じる熱応力および多孔質シリコンの構造変化に起因したピットの問題を解消し、更に該被膜に生じる反りと応力を低減できる、窒化物半導体薄膜形成に好適な窒化物半導体薄膜形成用基板を提供。 - 特許庁