By the lattice relaxation of the first conductivity type buffer layer 15, stress due to the difference of lattice constant between a material of the gallium nitride-based semiconductor layer 21a and a material of the principal plane 13a of the semiconductor region 13 is not applied on the active layer 17.例文帳に追加

第１導電型バッファ層１５の格子緩和により、窒化ガリウム系半導体層２１ａの材料と半導体領域１３の主面１３ａの材料との格子定数差に起因する応力が、活性層１７に加わることがない。 - 特許庁

Since a length W3 parallel to principal plane of the substrate of a sword guard 123 of a pin 121 is made to fulfill a designated condition, stress concentration is hard to occur at brazing material section between sword guard side face of the pin 121 and a pin bonding portion 111.例文帳に追加

ピン１２１の鍔部１２３の基板の主面と平行方向の長さＷ３を所定の条件を満たす長さとしたため、ピン１２１の鍔部側面とピン接合部１１１との間のロウ材の部分に応力集中が発生しにくい。 - 特許庁

A semiconductor device includes a stress adjustment resin layer 9 having a thermal expansion coefficient between a thermal expansion coefficient of a semiconductor substrate of a semiconductor chip 5 and a thermal expansion coefficient of an encapsulation resin 15 of the semiconductor chip 5 between a principal plane and the encapsulation resin 15 of the semiconductor chip 5.例文帳に追加

半導体チップ５の主平面と封止樹脂１５との間に、半導体チップ５の半導体基板の熱膨張率と封止樹脂１５の熱膨張率の間の熱膨張率をもつ応力調整用樹脂層９を備えている。 - 特許庁