scratch polishとは 意味・読み方・使い方

To provide an aqueous dispersing element for chemical mechanical polishing by which the occurrence of large solids in storage and conveyance is suppressed, a sufficient polish speed is maintained, and a scratch does not occur.例文帳に追加

保管、搬送時における粗大な固形物の発生が抑えられ、十分な研磨速度が維持され、スクラッチが発生しない化学機械研磨用水系分散体を提供する。 - 特許庁

To provide a wiring metal polishing composition which does not produce a scar called scratch and has a high polish rate in polishing a substrate having a metal such as wiring formed on a semiconductor wafer, to provide a manufacturing method, and to provide a polishing method.例文帳に追加

半導体ウェハー上に形成された配線などの金属を有する基盤の研磨において、スクラッチと呼ばれる傷がなく研磨速度の高い配線金属研磨用組成物、製造方法、および研磨方法を提供する。 - 特許庁

Then, any foreign matter such as polish waste 7 remaining on the surface of the substrate is removed, oxidant 8 is supplied to the surface of the substrate, and the conductive materials 6 embedded in the scratch on the surface of the insulating film 2 are oxidized.例文帳に追加

次に、基板表面に残っている研磨くず７などの異物を除去後、酸化剤８を基板表面上に供給し、絶縁膜２表面の傷中に埋め込まれた導電膜材料６を酸化する。 - 特許庁

To provide a polishing composition which can polish magnetic disk substrate with small surface roughness without generating neither protrusion nor polishing scratch, permitting a high density recording and at an economical speed.例文帳に追加

磁気ディスク基板の表面粗さが小さく、かつ突起や研磨傷を発生させず、高密度記録が可能であり、しかも経済的な速度で研磨できる研磨用組成物を提供すること。 - 特許庁

To provide a method for manufacturing a semiconductor substrate which can polish a metallic film at a high speed with a low load with use of a polishing pad having a smooth surface and can suppress occurrence of such a fault on the polished surface as scratch or dishing in a step of polishing the metallic film formed on the substrate using the polishing pad.例文帳に追加

基板の上に形成された金属膜を研磨パッドを用いて研磨する工程において、平滑な表面を有する研磨パッドで、低荷重で高速に金属膜を研磨し、かつスクラッチ、ディッシング等研磨面の欠陥の発生も抑制できる半導体基板の製造方法を提供する。 - 特許庁

To polish wafers such as silicon wafers while the generation of foreign matter caused by abnormal friction between a polishing member and a wafer, and the generation of a scratch considered to be mainly caused by the foreign matter, are suppressed as much as possible.例文帳に追加

研磨用部材とウェーハとの間の異常摩擦などに起因した異物の発生、および主としてこの異物に起因すると考えられているスクラッチの発生をできるだけ押さえながらシリコンウェーハ等のウェーハを研磨する方法の提供。 - 特許庁

To provide the chemical-mechanical polishing method of a semiconductor substrate capable of drastically reducing the generation of a scratch and peeling in a periphery even in the case of a low dielectric insulating film whose mechanical strength is small, and being excellent in the polish rate of a metal film of a wiring material, and to provide an aqueous dispersion for chemical-mechanical polishing used therefor.例文帳に追加

機械的強度が小さい低誘電絶縁膜であっても、スクラッチの発生や外周部における剥がれを大幅に低減可能であり、かつ配線材料たる金属膜の研磨速度に優れた半導体基板の化学機械研磨方法およびそのために用いられる化学機械研磨用水系分散体を提供すること。 - 特許庁