自発磁場の英語

本発明のさらに別の実施形態では、マグネットの磁場を変更するための方法は、所定の温度幅において温度上昇に伴って自発磁化の増加を示す第１の材料を含んだシムを前記磁場の内部に配置する工程を含む。例文帳に追加

A method for changing the magnetic field of the magnets, includes a process of arranging the shims including the first material for indicating an increase in the spontaneous magnetization in response to the temperature rise in the predetermined temperature width, inside the magnetic field. - 特許庁

マグネット（１２、１４、３６）の磁場を変更するように適合させたシム（２４、３４、５４）は所定の温度幅において温度上昇に伴って自発磁化の増加を示す第１の材料を含む。例文帳に追加

The shims 24, 34 and 54 are adapted so as to change a magnetic field of magnets 12, 14 and 36, and include a first material for indicating an increase in spontaneous magnetization in response to a temperature rise in a predetermined temperature width. - 特許庁

本発明による磁気ランダムアクセスメモリは，基板（１）と、反転可能な自発磁化を有する強磁性層（８）を含み，自発磁化の方向に応じて抵抗が変化し，且つ，前記基板（１）の上方に形成された磁気抵抗素子（５）と，磁気抵抗素子（５）に印加される磁場を発生する電流を流すための配線（１１）とを備えている。例文帳に追加

This magnetic random access memory comprises a substrate (1), a magnetoresistive element (5) which includes a ferromagnetic layer (8) having reversible spontaneous magnetization and whose resistance changes according to the direction of the spontaneous magnetization and which is formed above the substrate (1), and wiring (1) through which a current for generating a magnetic field applied to the magnetoresistive element (5) flows. - 特許庁