非結晶半導体の英語

絶縁層上に非晶質半導体薄膜を堆積し、その一部に単結晶半導体層を接触させ、熱処理によって単結晶半導体層の結晶性を反映させ非晶質半導体薄膜を単結晶化する半導体薄膜の結晶化方法。例文帳に追加

A method of crystallizing a semiconductor thin-film includes steps of depositing an amorphous semiconductor thin-film on the insulation layer, bringing the monocrystalline semiconductor layer into contact with part of the former thin-film, and single-crystallizing the amorphous semiconductor thin-film with crystallinity of the monocrystalline semiconductor layer reflected by heat treatment. - 特許庁

半導体装置は非単結晶半導体膜（１４）と、非単結晶半導体膜（１４）を支持する支持基板（１２）と、非単結晶半導体膜（１４）の一部をチャネル領域（２２）として有する能動素子（１０）とを備える。例文帳に追加

The semiconductor device has a non-single-crystal semiconductor film (14), a supporting substrate (12) for supporting the non-single-crystal semiconductor film (14), and an active element (10) having a portion of the non-single-crystal semiconductor film (14) as its channel region (22). - 特許庁

また、非晶質半導体膜に不純物を添加した後に結晶化を行うことで、結晶質半導体膜の結晶構造の破壊を防ぐ。例文帳に追加

Furthermore, the crystal structure of a crystalline semiconductor film is protected against destruction, causing crystallization after adding impurities an amorphous semiconductor film. - 特許庁

所定の光強度分布を有する光を非単結晶半導体膜に照射して結晶化半導体膜を生成する結晶化装置。例文帳に追加

The crystallizing apparatus irradiates a light having a predetermined light intensity distribution on the non-monocrystal semiconductor film to generate a crystallizing semiconductor film. - 特許庁

同一基板１０１上に擬似単結晶半導体１１３を用いた薄膜トランジスタと粒状の多結晶半導体１１２を用いた薄膜トランジスタの形成における結晶化前の非晶質半導体膜の膜厚を、擬似単結晶半導体部分２０５＞多結晶半導体部分２０６とした。例文帳に追加

The film thickness of an amorphous semiconductor film before crystallization in formation of a thin film transistor using a pseudo-monocrystal semiconductor 113 and a thin film transistor using a granular polycrystalline semiconductor 112 on the same substrate 101 is made larger in the pseudo-monocrystal semiconductor portion 205 than in the polycrystalline semiconductor portion 206. - 特許庁

最初、半導体膜５は非晶質半導体膜で形成され、レーザーアニールにより結晶化させる。例文帳に追加

The semiconductor film 5 is formed of amorphous semiconductor material first and is then turned into crystalline by laser annealing. - 特許庁

半導体装置の半製品およびその非晶質半導体層の結晶化方法例文帳に追加

PARTIALLY FABRICATED ITEM OF SEMICONDUCTOR DEVICE, AND METHOD FOR CRYSTALLIZING AMORPHOUS SEMICONDUCTOR LAYER OF IT - 特許庁

Ｉ型半導体層を含む非単結晶シリコンの半導体薄膜１４を設ける。例文帳に追加

The solar battery is provided with a thin non-single crystal silicon semiconductor film 14 containing the I-type semiconductor layer. - 特許庁