Before and After (film)とは 意味・読み方・使い方

The pressing member presses the film from the stage before the pulling up of the crop and before the cutting of the film to the stage after the pulling up of the crop and after the cutting of the film.例文帳に追加

マルチ押さえは作物抜上前でフィルム切断前から作物抜上後でフィルム切断後までフィルムを押さえる。 - 特許庁

The measurement of the film thickness is performed before and after the perimeter exposure processing of the wafer W.例文帳に追加

膜厚の測定は，ウェハＷの周辺露光処理の前後に行う。 - 特許庁

The change amount of the gap in the joint before and after its coating may be the change amount before the film is stripped and after the film has been stripped when the film can be stripped in addition to the change amount before its coating and after its coating.例文帳に追加

被覆前後における合い口隙間の変化量は、被覆前と被覆後の変化量の他、皮膜が剥離可能なものであれば剥離前と剥離後の変化量でもよい。 - 特許庁

Next, thickness of the thin film is obtained from change of the polarizing state before and after thin film formation.例文帳に追加

次いで、薄膜形成前後における偏光状態の変化から、薄膜の厚さを求める。 - 特許庁

The thermal treatment in an atmosphere is performed before or after, or both before and after the thin film is formed and subjected to the photolithography process.例文帳に追加

大気中での熱処理は、薄膜を形成してフォトリソグラフィ加工を行う前又は後のいずれか、あるいは前後の双方で行われる。 - 特許庁

Film forming conditions can be controlled so as to obtain a film thickness distribution which is equal to a target film thickness distribution in a film to be polished after the film is polished by counting backward the film thickness distribution of the film, before the film is polished by comparing the polishing rate distribution in the film and the target film thickness distribution in the film after the film is polished with each other.例文帳に追加

被研磨膜の研磨レート分布と研磨後の被研磨膜の目標膜厚分布とを比較することによって、研磨前の被研磨膜の膜厚分布を逆算し、研磨後に目標膜厚分布通りの被研磨膜の膜厚分布が得られるように予め成膜条件を制御することができる。 - 特許庁

The control section places the wafer lifting mechanism at the measurement height in a state that the wafer is supported before and after a film formation on the wafer, measures the height of the lifted wafer, and calculates a change in a warpage of the wafer before and after the film formation based on height data of the wafer before and after the film formation.例文帳に追加

前記制御部は、前記ウエハの成膜前後に、前記ウエハを支持した状態で前記ウエハ持ち上げ機構を測定用高さに位置させ、持ち上げられた前記ウエハの高さを測定し、成膜前後の前記ウエハの高さデータに基いて、成膜前後での前記ウエハの反り変化量を算出する。 - 特許庁