Forbidden (band)とは 意味・読み方・使い方

Light in a multiplexed/demultiplexed wavelength band which is not included in a transmitting wavelength band of the trunk waveguide 24 in the forbidden band area 212 and is included in a transmitting wavelength band of the trunk waveguide 24 in the forbidden band area 211 is reflected on the boundary 23 and demultiplexed from the trunk waveguide 24 to the branch waveguide 25.例文帳に追加

禁制帯領域２１２内の幹導波路２４の透過波長帯には含まれず禁制帯領域２１１内の幹導波路２４の透過波長帯には含まれる合分波波長帯域内の光は、境界２３において反射され、それにより幹導波路２４から枝導波路２５に分波される。 - 特許庁

A nitride semiconductor layer 7 is provided between a gate electrode 3 and the active layer 5, and is composed of a III group nitride semiconductor with a second forbidden band width which is larger than the first forbidden band width.例文帳に追加

窒化物半導体層７は、ゲート電極３と活性層５との間に設けられており、第１の禁制帯幅より大きな第２の禁制帯幅を有するIII族窒化物半導体からなる。 - 特許庁

Light stimulated from the inner quantum well layer 5a with the greater forbidden band width is made incident on the outermost quantum well layers 5b, 5c with the smaller forbidden band width and absorbed in them so that the stimulated emission effect can be improved.例文帳に追加

禁制帯幅の大きい内側の量子井戸層５ａから生じた光が、禁制帯幅の小さい最も外側の量子井戸層５ｂ，５ｃに入射して吸収され、誘導放出効果を高めることができる。 - 特許庁

The fourth semiconductor layer 6 is provided so as to have a gap in a portion thereof on the third semiconductor layer 5, and has a forbidden band width equal to or larger than the forbidden band width of the second semiconductor layer 4.例文帳に追加

第４半導体層６は、第３半導体層５の上において一部に隙間を有して設けられ、第２半導体層４の禁制帯幅以上の禁制帯幅を有する。 - 特許庁

A slab-like body 21 is provided with a plurality of forbidden band areas 211, 212 and holes 221, 222 are arranged at a different period and a different size in each forbidden band area.例文帳に追加

スラブ状の本体２１に複数の禁制帯領域２１１、２１２を設け、空孔２２１、２２２を禁制帯領域毎に異なる周期及び大きさで配置する。 - 特許庁

The first semiconductor layer 14 has a crystal structure that is different from that of the second semiconductor layer 13, and the forbidden band width Eg_1 of the first semiconductor layer 14 and the forbidden band width Eg_2 of the second semiconductor layer 13 satisfy the relation Eg_1<Eg_2.例文帳に追加

第１の半導体層１４と第２の半導体層１３の結晶構造が異なり、第１の半導体層１４の禁制帯幅Ｅｇ_1と第２の半導体層１３の禁制帯幅Ｅｇ_2とが、Ｅｇ_1＜Ｅｇ_2の関係を満たす。 - 特許庁

A photovoltaic cell structure, wherein a p-type light absorption layer has a localized level or an intermediate band in the forbidden band is obtained, by forming a p-n heterojunction that is laminated of an n-type semiconductor, having the forbidden band width larger than that of the light-absorbing layer on the light-incident side thereof.例文帳に追加

p型光吸収層の光入射側に、前記光吸収層よりも禁制帯幅の大きいn型半導体が積層したヘテロ接合型のpn接合の形成により、前記光吸収層は禁制帯中に局在準位または中間バンドをもつ太陽電池構造とする。 - 特許庁

The emitter layer 26 includes a second semiconductor having a larger forbidden band width than that of the first semiconductor.例文帳に追加

エミッタ層２６は、第１の半導体材料の禁制帯幅より大きな禁制帯幅を有する第２の半導体を含む。 - 特許庁