「IDS2」を含む例文一覧(1)
- To the gate of the FET 1 for high frequency amplification, a potential obtained by subtracting the portion of a voltage drop generated in a first resistor 22 by the drain current IDS2 of the FET 21 for bias from the potential GND of a first potential applying part 2a is applied.
高周波増幅用ＦＥＴ１のゲートには、第１の電位印加部２ａの電位ＧＮＤからバイアス用ＦＥＴ２１のドレイン電流ＩＤＳ２によって第１の抵抗２２に生じる電圧降下分を減じて得られる電位が印加される。 - 特許庁
- 特許庁
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