「ea4」を含む例文一覧(8)
- The coupling characteristics may be selectively influenced by using heating electrodes EA1,...EA4; EB1,...EB4.
結合特性は加熱電極ＥＡ１．．．ＥＡ４；ＥＢ１．．．ＥＢ４を使用して選択的に影響され得る。 - 特許庁 - Then, four DMDs provided respectively at the exposure heads 12A through 12D are controlled independently, according to the relative position of the exposure areas EA1 through EA4, and an exposure motion according to the pattern is executed.
そして、露光ヘッド１２Ａ〜１２Ｄにそれぞれ設けられた４つのＤＭＤを、露光エリアＥＡ１〜ＥＡ４の相対位置に応じて独立制御し、パターンに応じた露光動作を実行する。 - 特許庁 - Four DMDs (digital mirror devices) mounted on the respective exposure heads 12A to 12D are independently controlled according to the relative positions of the exposure areas EA1 to EA4 to expose in accordance with the pattern.
そして、露光ヘッド１２Ａ〜１２Ｄにそれぞれ設けられた４つのＤＭＤを、露光エリアＥＡ１〜ＥＡ４の相対位置に応じて独立制御し、パターンに応じた露光動作を実行する。 - 特許庁 - Four DMDs (digital mirror devices) provided in the respective exposure heads 12A to 12D are independently controlled according to the relative positions of the exposure areas EA1 to EA4 to expose along the pattern.
そして、露光ヘッド１２Ａ〜１２Ｄにそれぞれ設けられた４つのＤＭＤを、露光エリアＥＡ１〜ＥＡ４の相対位置に応じて独立制御し、パターンに応じた露光動作を実行する。 - 特許庁 - Four DMDs (digital mirror devices) provided in the respective exposure heads 12A to 12D are independently controlled according to the relative positions of the exposure areas EA1 to EA4 to perform exposure operation corresponding to the pattern.
そして、露光ヘッド１２Ａ〜１２Ｄにそれぞれ設けられた４つのＤＭＤを、露光エリアＥＡ１〜ＥＡ４の相対位置に応じて独立制御し、パターンに応じた露光動作を実行する。 - 特許庁 - Four exposure heads 12A through 12D are placed at the upper side of a substrate SW, and exposure areas EA1 through EA4 by the exposure heads 12A through 12D are relatively moved, along scanning bands S1 through S4 prescribed on the substrate SW.
４つの露光ヘッド１２Ａ〜１２Ｄを基板ＳＷ上方に配置し、露光ヘッド１２Ａ〜１２Ｄによる露光エリアＥＡ１〜ＥＡ４を、基板ＳＷ上に規定される走査バンドＳ１〜Ｓ４に沿って相対移動させる。 - 特許庁 - Four exposure heads 12A to 12D are disposed above a substrate SW and exposure areas EA1 to EA4 by the exposure heads 12A to 12D are relatively moved along scanning bands S1 to S4 specified on the substrate SW.
４つの露光ヘッド１２Ａ〜１２Ｄを基板ＳＷ上方に配置し、露光ヘッド１２Ａ〜１２Ｄによる露光エリアＥＡ１〜ＥＡ４を、基板ＳＷ上に規定される走査バンドＳ１〜Ｓ４に沿って相対移動させる。 - 特許庁 - Four exposure heads 12A to 12D are placed above a substrate SW and the exposure areas EA1 to EA4 by the exposure heads 12A to 12F are relatively moved along scanning bands S1 to S4 defined on the substrate SW.
４つの露光ヘッド１２Ａ〜１２Ｄを基板ＳＷ上方に配置し、露光ヘッド１２Ａ〜１２Ｄによる露光エリアＥＡ１〜ＥＡ４を、基板ＳＷ上に規定される走査バンドＳ１〜Ｓ４に沿って相対移動させる。 - 特許庁
- 特許庁
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