To provide a semiconductor element, in which a cell region is formed as a shallow junctionalregion by forming a single crystal silicon in a selective epitaxial growth method, and a deep junction region with a uniform depth is formed at the surrounding region in an ion implantation step. セル領域は、選択的エピタキシャル成長方法で単結晶シリコン層を形成して浅い接合領域を形成し、周辺領域はイオン注入で均一な深さの深い接合領域を形成した半導体素子を提供する。 - 特許庁