COATING LIQUID FOR FORMING LOW PERMITTIVITY INSULATING FILM 低誘電率絶縁膜形成用塗布液 - 特許庁
To manufacture multilayer films having a low permittivity. 比誘電率の低い多層膜を製造する。 - 特許庁
The substrate characteristics include a permittivity and permeability. 基板特性は誘電率と透磁率を含む。 - 特許庁
MANUFACTURING METHOD OF LOW-PERMITTIVITY SILICON CARBIDE FILM 低誘電率炭化珪素膜の製造方法 - 特許庁
CAPPING LAYER FOR EXTREME LOW PERMITTIVITY FILM 極限低誘電率膜のためのキャッピング層 - 特許庁
To provide a low permittivity filler for forming a low permittivity film having an excellent permittivity characteristic, low surface roughness, a low thermal expansion coefficient, and high tearing strength, and a low permittivity composition and a low permittivity film using this. 誘電率特性に優れ、表面粗さおよび熱膨張係数が低く、破断強度が高い低誘電率膜を形成するための低誘電率フィラーと、これを用いた低誘電率組成物および低誘電率膜を提供する。 - 特許庁
To provide a high permittivity insulation sheet with satisfactory flexibility, heat resistance and permittivity. 良好な可撓性、耐熱性、および誘電率を備えた高誘電率絶縁シートを提供する。 - 特許庁
LOW-PERMITTIVITY CERAMIC DIELECTRIC COMPOSITION FOR LOW-TEMPERATURE BURNING, AND LOW-PERMITTIVITY CERAMIC DIELECTRIC BODY 低温焼成用低誘電率セラミック誘電体組成物及び低誘電率セラミック誘電体 - 特許庁
COMPOSITION FOR FILM HAVING LOW PERMITTIVITY, FILM HAVING LOW PERMITTIVITY AND ITS MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE 低誘電率膜用組成物、低誘電率膜及びその製造方法、並びに、半導体装置 - 特許庁
SEMICONDUCTOR SUBSTRATE WITH LOW-PERMITTIVITY SILICA FILM, AND METHOD FOR FORMING THE LOW-PERMITTIVITY SILICA FILM 低誘電率シリカ系被膜付半導体基板および低誘電率シリカ系被膜の形成方法 - 特許庁
The semiconductor device provided has the film having low permittivity. 該低誘電率膜を有する半導体装置。 - 特許庁
To provide a silicon oxide film which is reduced in permittivity. 低誘電率シリコン酸化膜を形成する。 - 特許庁
HIGH PERMITTIVITY EPOXY RESIN PASTE AND ELECTRONIC PART 高誘電率エポキシ樹脂ペーストおよび電子部品 - 特許庁
MANUFACTURING METHOD FOR OF NANOPARTICLE FILM WITH LOW PERMITTIVITY 誘電率が低いナノ粒子膜の製造方法 - 特許庁
SEMICONDUCTOR DEVICE HAVING HIGH PERMITTIVITY INSULATING FILM 高誘電率絶縁膜を有する半導体装置 - 特許庁
VERY LOW PERMITTIVITY PLASMA-ENHANCED CVD FILM 非常に低い誘電率プラズマ強化CVD膜 - 特許庁
COMPOSITION FOR FORMING HIGH PERMITTIVITY FILM, METHOD FOR FORMING THE SAME, HIGH PERMITTIVITY FILM AND ELECTRONIC PART EQUIPPED WITH HIGH PERMITTIVITY FILM 高誘電率被膜形成用組成物、該高誘電率被膜形成用組成物の製造方法、高誘電率被膜、および該高誘電率被膜を備えた電子部品 - 特許庁
The relative permittivity ε3 of the solid component 120 is set on a relative permittivity ε2 of the case 102 or more, or on a relative permittivity ε1 of the substrate 110 or less. この固形部材120の比誘電率ε3は、筐体102の比誘電率ε2以上、基体110の比誘電率ε1以下に設定される。 - 特許庁
DRY-ETCHING METHOD OF LOW-PERMITTIVITY INTERLAYER INSULATING FILM 低誘電率層間絶縁膜のドライエッチング方法 - 特許庁
After a high-permittivity insulating film is formed, the surface of the high-permittivity insulating film is subjected to a plasma treatment. 高誘電率絶縁膜の形成後に、この高誘電率絶縁膜の表面にプラズマ処理を施す。 - 特許庁
In each unit structure, the positive permittivity part and negative permittivity part are arranged in the periodic direction. 単位構造の各々において正誘電率部及び負誘電率部が周期方向に配列される。 - 特許庁
LOW-PERMITTIVITY MATERIAL FOR MANUFACTURE OF INTEGRATED CIRCUIT 集積回路製造のための低誘電率材料 - 特許庁
METHOD FOR FORMING LOW PERMITTIVITY INTERLAYER INSULATION FILM 低誘電率層間絶縁膜を形成する方法 - 特許庁
METHOD AND DEVICE FOR MEASURING PERMITTIVITY 誘電率の測定方法及び誘電率測定装置 - 特許庁
MODIFIER FOR LOW-PERMITTIVITY FILM AND ITS MANUFACTURING METHOD 低誘電率膜の改質剤及び製造方法 - 特許庁
(b) Permittivity ε of the composition is at least 1000. (b)その誘電率εが1000以上である。 - 特許庁
HIGH PERMITTIVITY INSULATION SHEET, AND METHOD FOR PRODUCING THE SAME 高誘電率絶縁シートおよびその製造方法 - 特許庁
The substrate properties include permittivity and permeability. 基板特性は、誘電率及び透磁率を包含する。 - 特許庁