Then, the rear surface of the wafer 2a is ground to singulate the wafer into chips 2b, and then, rear surface processing such as formation of rear electrodes 9a followed by heat treatment is executed without separating the chips 2b from the supporter 5. そして、ウエハ2aの裏面を研削して各チップ2bに個片化したあと、チップ2bを支持体5から分離せずに、裏面電極9a形成などの熱処理を伴う裏面加工を行う。 - 特許庁