「nitride」の共起表現(1語右で並び替え) - Weblio英語共起表現検索


小窓モード

プレミアム

ログイン
設定

設定

「nitride」の共起表現一覧(1語右で並び替え)

該当件数 : 36



It is an alloy of aluminium nitride and gallium nitride.
e hardest materials known, behind cubic boron nitride and diamond.
mond and comparable with those of cubic boron nitride and boron.
kwell C hardness rating via a 500 °C (932 °F) nitride bath.
Beryllium nitride, Be3N2, is a nitride of beryllium.
Thin polycrystalline films of indium nitride can be highly conductive and even superconduc
Zinc nitride can be obtained by thermally decomposing zinc
Boron nitride can be doped p-type with Be and n-type with b
Uranium nitride can be synthesized by the reaction of nitroge
8 high carbon stainless steels, and titanium nitride coatings.
rowski developed technology to create gallium nitride crystals with high structural quality and few
Admixture of about 10% silicon nitride facilitates the sintering, though sintering w
as a binder in some grades of hexagonal boron nitride for hot pressing.
For example during Gallium nitride growth, HVPE uses ammonia(NH3), and GaCl2, wh
include cobalt, ruthenium, tantalum, tantalum nitride, indium oxide, tungsten nitride, and titanium
ium (Ca2+) take the oxide (O2−) positions and nitride ions (N3−) the manganese (Mn3+).
α-Calcium nitride is the commonly encountered form.
Calcium nitride is a red-brown, crystalline solid made up of
ssure deposition of thin films of cubic boron nitride is possible.
axially grown thin film crystalline aluminium nitride is also used for surface acoustic wave sensor
Beryllium nitride is prepared by heating beryllium metal powder
Indium gallium nitride is the light-emitting layer in modern blue an
e made for frequencies up to 200 GHz, gallium nitride materials can reach up to 3 terahertz.
The boron nitride nanomesh is not only stable to decomposition
mium(III) oxide is formed when neodymium(III) nitride or neodymium(III) hydroxide is burned in air.
Uranium nitride refers to a family of several ceramic compoun
This is a MEMS device that uses aluminium nitride sandwiched between two metal layers.
It reacts with silicon nitride, Si3N4 in a stream of ammonia at 1800-1900°C
ealth and safety aspects of aluminium gallium nitride sources (such as trimethylgallium and ammonia
, health and safety aspects of indium gallium nitride sources (such as trimethylindium, trimethylga
composition regime between ~ 15% -85% Indium nitride spinodal decomposition should occur leading t
This layer is usually an oxide or nitride that is a few nanometers thick.
Silicon Carbide Transistor (SiC) and Gallium Nitride Transistor (GaN) technologies.
nalysis, semiconductors (particularly gallium nitride), ultra-high temperature aerospace materials
aterials such as indium phosphide and gallium nitride utilized in high-performance wireless, optica
hard synthetic materials, such as cubic boron nitride, which makes production cheap.
                                                                                                   


こんにちは ゲスト さん

ログイン

Weblio会員(無料)になると

会員登録のメリット検索履歴を保存できる!

会員登録のメリット語彙力診断の実施回数増加!

無料会員に登録する
英→日 日→英
こんにちは ゲスト さん

ログイン

Weblio会員(無料)になると

会員登録のメリット検索履歴を保存できる!

会員登録のメリット語彙力診断の実施回数増加!

無料会員に登録する

©2024 GRAS Group, Inc.RSS