「nitride」の共起表現一覧(1語右で並び替え)
該当件数 : 36件
It is an alloy of aluminium | nitride and gallium nitride. |
e hardest materials known, behind cubic boron | nitride and diamond. |
mond and comparable with those of cubic boron | nitride and boron. |
kwell C hardness rating via a 500 °C (932 °F) | nitride bath. |
Beryllium | nitride, Be3N2, is a nitride of beryllium. |
Thin polycrystalline films of indium | nitride can be highly conductive and even superconduc |
Zinc | nitride can be obtained by thermally decomposing zinc |
Boron | nitride can be doped p-type with Be and n-type with b |
Uranium | nitride can be synthesized by the reaction of nitroge |
8 high carbon stainless steels, and titanium | nitride coatings. |
rowski developed technology to create gallium | nitride crystals with high structural quality and few |
Admixture of about 10% silicon | nitride facilitates the sintering, though sintering w |
as a binder in some grades of hexagonal boron | nitride for hot pressing. |
For example during Gallium | nitride growth, HVPE uses ammonia(NH3), and GaCl2, wh |
include cobalt, ruthenium, tantalum, tantalum | nitride, indium oxide, tungsten nitride, and titanium |
ium (Ca2+) take the oxide (O2−) positions and | nitride ions (N3−) the manganese (Mn3+). |
α-Calcium | nitride is the commonly encountered form. |
Calcium | nitride is a red-brown, crystalline solid made up of |
ssure deposition of thin films of cubic boron | nitride is possible. |
axially grown thin film crystalline aluminium | nitride is also used for surface acoustic wave sensor |
Beryllium | nitride is prepared by heating beryllium metal powder |
Indium gallium | nitride is the light-emitting layer in modern blue an |
e made for frequencies up to 200 GHz, gallium | nitride materials can reach up to 3 terahertz. |
The boron | nitride nanomesh is not only stable to decomposition |
mium(III) oxide is formed when neodymium(III) | nitride or neodymium(III) hydroxide is burned in air. |
Uranium | nitride refers to a family of several ceramic compoun |
This is a MEMS device that uses aluminium | nitride sandwiched between two metal layers. |
It reacts with silicon | nitride, Si3N4 in a stream of ammonia at 1800-1900°C |
ealth and safety aspects of aluminium gallium | nitride sources (such as trimethylgallium and ammonia |
, health and safety aspects of indium gallium | nitride sources (such as trimethylindium, trimethylga |
composition regime between ~ 15% -85% Indium | nitride spinodal decomposition should occur leading t |
This layer is usually an oxide or | nitride that is a few nanometers thick. |
Silicon Carbide Transistor (SiC) and Gallium | Nitride Transistor (GaN) technologies. |
nalysis, semiconductors (particularly gallium | nitride), ultra-high temperature aerospace materials |
aterials such as indium phosphide and gallium | nitride utilized in high-performance wireless, optica |
hard synthetic materials, such as cubic boron | nitride, which makes production cheap. |
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