「GA as」の共起表現一覧(1語右で並び替え)
該当件数 : 26件
| e originally fabricated using gallium arsenide ( | GaAs), a III-V compound semiconductor. |
| d crystalline quality of semiconductors such as | GaAs and InP. |
| (typically 8" or 12" compared with 4" or 6" for | GaAs) and the wafer costs are lower, contributing to |
| The Gaa | Gaas are a Post-Punk/Garage band from Jersey in the |
| Eesti | Gaas AS is the Estonian natural gas company, which i |
| andgap channel layer with no dopant impurities ( | GaAs in this case). |
| iconductor materials based on gallium arsenide ( | GaAs), indium phosphide (InP), gallium nitride (GaN) |
| acking high quality surface passivation such as | GaAs, InP, or SiC, and are faster but more expensive |
| Eesti | Gaas is owned by Gazprom (37.02%), |
| GaAs is lattice mismatched to Ge by 0.08%. | |
| In the figure, | GaAs is grown on misoriented surface of Si (details |
| Gaas is a commune in the Landes department in Aquita | |
| ether constructed from GaN or frequency-doubled | GaAs laser diodes) is not in fact blue, but appears |
| Transfer of electrons into the undoped | GaAs layer brings about the interface depletion. |
| Integrated circuitry: | GaAs MMIC |
| Photograph of a | GaAs MMIC (a 2-18GHz upconverter) |
| Formation of Thick Metal Structures on | GaAs MMICs Using Image Reversal Lithography and Evap |
| es transmit/receive (TR) modules populated with | GaAs MMICs. |
| ral gas company Gasum in cooperation with Eesti | Gaas of Estonia. |
| Highlighted area showing antiphase domain in | GaAs on Si |
| Headquarters of Eesti | Gaas on Liivalaia street, Tallinn. |
| s (in particular electron and hole transport in | GaAs quantum wires and dots). |
| Genesis I is outfitted with eight | GaAs solar panel arrays, four on each end of the cra |
| on-resonance spectra has been observed near the | GaAs transverse optical (TO) phonon frequency rather |
| 600 boe per day in 2009 (7,975 of it is natural | gaas), Utikuma light oil field in Alberta is top fiv |
| ce or 'photomixer' is made from low temperature | GaAs with a patterned metalised layer which is used |
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