melt interfaceとは 意味・読み方・使い方

In its manufacturing method, continuous molding is performed under the condition in which an interface relative movement speed between melt and solidified portion is 20 mm/min or faster.例文帳に追加

製造方法は、溶湯と凝固部分の界面相対移動速度を２０ｍｍ／分以上の条件下で連続鋳造する。 - 特許庁

To provide a manufacturing method for a composite product which can secure strength and airtightness in the melt-bonding interface of a couple of resin products.例文帳に追加

樹脂製品同士の溶着界面において強度及び気密性を確保する複合製品の製造方法を提供する。 - 特許庁

The electrodes 54, 55 are brought into contact with the upper interface of a raw material melt B in the crucible 12 from the above during the growth of the crystal.例文帳に追加

結晶成長中に，るつぼ１２内の原料融液Ｂの上界面に上方から電極５４，５５を接触させる。 - 特許庁

To make an even magnetic field obtainable in a silicon melt, make impurities preventable from concentrating on the central surface of the silicon melt, and to effectively control a solid-liquid interface form directly below a silicon single crystal rod.例文帳に追加

シリコン融液に均一な磁場が得られ、不純物がシリコン融液の中央表面に集中することを防止でき、かつシリコン単結晶棒直下の固液界面形状を有効に制御する。 - 特許庁

In formula, ω is rotation speed of the crystal after interface inversion, ω_0 is initial rotation speed, L_0 is an initial depth of the melt, and L is a depth of the melt during crystal growing.例文帳に追加

ω_０×（Ｌ／Ｌ_０）＞ω＞ω_０×（Ｌ／Ｌ_０）^１／４・・・（１）（式中、ωは界面反転後の結晶の回転速度、ω_０は初期回転速度、Ｌ_０は初期融液深さ、Ｌは育成中の融液深さである） - 特許庁

METHOD AND APPARATUS FOR GROWING SILICON CRYSTAL BY CONTROLLING MELT-SOLID INTERFACE SHAPE AS FUNCTION OF AXIAL LENGTH例文帳に追加

軸方向長さの関数としてメルト−固体界面形状を制御することによってシリコン結晶を成長させる装置及び方法 - 特許庁

The natural convection S overcomes a forced convection formed near the solid-liquid interface by a relative rotation of the GaAs single crystal 3 and the crucible 7 and becomes the dominant convection in the GaAs melt 6, which enables the solid-liquid interface to be convexly curved toward the GaAs melt 6.例文帳に追加

これにより、ＧａＡｓ単結晶３とルツボ７との相対回転に起因する固液界面付近の強制対流に打ち勝って、ＧａＡｓ融液６内の対流は自然対流Ｓが支配的となり、固液界面形状をＧａＡｓ融液６側に凸面に制御可能となる。 - 特許庁

To enhance moisture-proof effect against water entry into lateral face side on a substrate from interface between a scintillator layer and the substrate, while using hot melt resin as a scintillator protective layer to achieve process simplification, drastic reduction in work man-hour, and sharp cost-reduction.例文帳に追加

基板の側面側における、シンチレータ層と基板との界面からの水分の浸入に対する防湿効果を向上させる。 - 特許庁