thermal cracking in vapor phaseとは 意味・読み方・使い方

To provide a method capable of manufacturing a high-quality gallium nitride semiconductor substrate while suppressing crystal degradation caused by the reaction of Ga and Si and suppressing occurrence of cracking caused by the difference in thermal expansion coefficients of GaN and Si in the process of forming a thick film gallium nitride semiconductor layer on a Si(111) face by using a vapor phase growth method.例文帳に追加

Ｓｉ（１１１）面上に気相成長法を利用して、厚膜の窒化ガリウム系半導体層を形成する際、ＧａとＳｉに因る反応に起因する結晶劣化、ＧａＮとＳｉの熱膨張係数差に起因するクラッキング発生を抑制し、良質な窒化ガリウム系半導体基板の作製を可能とする作製方法の提供。 - 特許庁