Ti thin filmsとは 意味・読み方・使い方

SELECTIVE ETCHING TREATMENT METHOD FOR THIN FILMS OF SIO2, TI AND IN2O3 APPLIED TO FERAM DEVICE例文帳に追加

ＦｅＲＡＭ装置に適用するＳｉＯ２、ＴｉおよびＩｎ２Ｏ３薄膜の選択的エッチング処理法 - 特許庁

Several dielectric precursor thin films 4-7 are formed on a lower electrode thin film 3 in such a way that the concentration of Ti in the dielectric precursor thin film 4 on the side of a silicon substrate 1 is smaller than that of Ti in the dielectric precursor thin film 7 on the side opposite to the silicon substrate 1.例文帳に追加

シリコン基板１側の誘電体前駆体薄膜４におけるＴｉの濃度が、シリコン基板１と反対側の誘電体前駆体薄膜７におけるＴｉの濃度よりも小さくなるようにして、複数の誘電体前駆体薄膜４，…，７を下部電極薄膜３上に形成する。 - 特許庁

After that, the several dielectric precursor thin films 4-7 are baked for crystallization and a ferroelectric thin film 10 in which the concentration of Ti is almost uniform in the direction of the depth of the silicon substrate 1.例文帳に追加

その後、複数の誘電体前駆体薄膜４，…，７の結晶化の焼成を行って、シリコン基板１の深さ方向においてＴｉの濃度が略均一な強誘電体薄膜１０を形成する。 - 特許庁

The photocatalytic layer composed mainly of TixOy (x and y are an integer other than 1.) is formed by applying a titanium oxide and titanium at a specified Ti component ratio to the surface of the base and thereby forming their respective thin coating films and thermally treating the thin coating films in a non-oxygen atmosphere of 800-1,200°C.例文帳に追加

基材表面に、所定のＴｉ成分比率でチタン酸化物とチタンとをコーティングして各々の薄膜を形成すると共に８００℃〜１２００℃の非酸素雰囲気にて加熱処理し、ＴｉｘＯｙ（ｘ、ｙは１以外の整数）を主成分とした光触媒層を形成する。 - 特許庁

A lead electrode 23 extended from an exciting electrode 21 of a crystal oscillator body 2 is made of thin films formed by sputtering or vapor-deposition whose first layer is a Ti film 23a and whose second layer is a Pd film 23b.例文帳に追加

水晶振動体２の励振電極２１から延在する引出電極２３は、スパッタリング又は蒸着により形成された薄膜であり、第一層がＴｉ膜２３ａ、第二層がＰｄ膜２３ｂである。 - 特許庁

Pt, Cu, Ag, Pd, Ru, Ta, Ti, Au, In, Zn, Ni, Fe, Mn, Cr, V, Al, Mg and the like, the alloys of these various metallic elements, the alloys of these alloys and Pt and the like are used preferably as materials for the metallic thin-films 3b and 3d for the reinforcement.例文帳に追加

強化用金属薄膜３ｂ、３ｄの材料としては、Ｐｔ、Ｃｕ、Ａｇ、Ｐｄ、Ｒｕ、Ｔａ、Ｔｉ、Ａｕ、Ｉｎ、Ｚｎ、Ｎｉ、Ｆｅ、Ｍｎ、Ｃｒ、Ｖ、Ａｌ、Ｍｇ等々、これら各種金属元素の合金、これらとＰｔとの合金等が好適に用いられる。 - 特許庁

The ferroelectric storage element having the structure covering at least a part of the ferroelectric thin film (4) and further covering an interlayer insulation film of BPSG(boron phosphorous silicate glass) small in the diffusion coefficient of hydrogen is provided by the lamination of Ti (9), the oxidation films (8) and (8').例文帳に追加

また、水素を吸蔵するＴｉ（９）と酸化膜（８）および（８’）の積層で強誘電体薄膜（４）の少なくとも一部を覆い、さらに水素の拡散係数が小さいＢＰＳＧ（boron phosphorus silicate glass）（１２）の層間絶縁膜で覆う構造を有する強誘電体記憶素子を提供する。 - 特許庁