遠紫外線レジストの英語

ラインエッジラフネスが改善され、更に感度、解像力、レジスト形状及び焦点深度などのレジスト諸特性にも優れた遠紫外線露光用ポジ型フォトレジスト組成物を提供すること。例文帳に追加

To provide a positive photoresist composition for exposure with far UV giving improved line edge roughness and excellent also in various characteristics as a resist such as sensitivity, resolving power, resist shape and the depth of a focus. - 特許庁

半導体デバイスの製造において、ハーフトーン位相差シフトマスク適正に優れた遠紫外線露光用ポジ型フォトレジスト組成物、更には、感度、プロファイルにも優れた遠紫外線露光用ポジ型フォトレジスト組成物を提供する。例文帳に追加

To provide a positive photoresist composition for exposure with far UV excellent in aptness for a halftone phase shift mask in the production of a semiconductor device and to provide a positive photoresist composition for exposure with far UV excellent also in sensitivity and profile. - 特許庁

半導体デバイスの製造において、ＡｒＦやＫｒＦを光源とする遠紫外線領域の露光に対応し得、ラインエッジラフネスが改善され、さらに解像力、レジスト形状、焦点深度などのレジスト諸特性にも優れた遠紫外線露光用ポジ型感光性組成物を提供すること。例文帳に追加

To provide a positive type photosensitive composition for exposure with far UV adaptable to exposure in the far UV region using ArF or KrF as a light source, ensuring improved line edge roughness and excellent also in various characteristics as a resist such as resolving power, resist shape and the depth of a focus when a semiconductor device is produced. - 特許庁

半導体デバイスの製造において、ＡｒＦやＫｒＦを光源とする遠紫外線領域の露光に対応し得、レジストパターンの寸法均一性が改善され、さらに解像力、焦点深度などのレジスト諸特性にも優れた遠紫外線露光用ポジ型感光性組成物を提供する。例文帳に追加

To provide a positive photosensitive composition for exposure with far UV adaptable to exposure in the far UV region using ArF or KrF as a light source in production of a semiconductor device, ensuring improved dimensional uniformity of a resist pattern and excellent also in various properties as a resist, such as resolving power and focal depth. - 特許庁

半導体デバイスの製造において、ＡｒＦやＫｒＦを光源とする遠紫外線領域の露光に対応し得、ラインエッジラフネスが改善され、さらに解像力、レジスト形状、焦点深度などのレジスト諸特性にも優れた遠紫外線露光用ポジ型感光性組成物を提供すること。例文帳に追加

To provide a positive-type photosensitive composition for exposure with far-UV, adaptable to exposure in the far UV region with ArF or KrF as a light source in the production of a semiconductor device, ensuring improved line edge roughness and excellent in various characteristics as a resist, such as resolving power, resist shape and the depth of a focus. - 特許庁

ＫｒＦ、ＡｒＦエキシマレーザー等の遠紫外線やＦ_２エキシマレーザー等の真空紫外線を用いる、微細加工に有用な化学増幅型レジスト組成物を提供すること。例文帳に追加

To provide a chemically amplified resist composition useful in microfabrication using far UV such as KrF or ArF excimer laser or vacuum UV such as F_2 excimer laser. - 特許庁

高い解像性と良好な保存安定性を与え、電子線、遠紫外線、極紫外線などを用いた微細加工に有用な化学増幅レジスト材料の提供。例文帳に追加

To provide a chemical amplifying resist material that provides high resolution and storage stability, and is useful for microfabrication using an electron ray, a far-ultraviolet ray, and an extreme ultraviolet ray. - 特許庁

ＫｒＦ、ＡｒＦエキシマレーザー等の遠紫外線やＦ_2エキシマレーザー等の真空紫外線に対して用いられる、放射線の透過性に優れ、耐ドライエッチング性に優れたレジスト組成物の提供。例文帳に追加

To provide a resist composition which is superior in transmission of radiation and dry etching resistance and used for far-ultraviolet rays, such as those of KrF and ArF excimer lasers and vacuum ultraviolet rays, such as those of F_2 excimer laser. - 特許庁