forward-blocking regionとは 意味・読み方・使い方

The semiconductor snubber 200 includes a capacitor 210 formed at least on one end side of the substrate region during reverse bias of the reflux diode 100, a resistance 220 including a part of the substrate region, and a reverse blocking diode 222 formed on at least a part of the substrate region so as to be in a reverse blocking state with respect to forward bias of the reflux diode 100.例文帳に追加

半導体スナバ２００は、還流ダイオード１００の逆バイアス時に少なくとも前記基板領域の一端側に形成されるキャパシタ２１０と、基板領域の一部を含む抵抗２２０と、還流ダイオード１００の順バイアスに対して逆阻止状態となるように、基板領域の少なくとも一部に形成された逆阻止型ダイオード２２２とを含む。 - 特許庁

In a reverse blocking semiconductor element, an only first termination for achieving a breakdown voltage of a forward direction is formed on a main surface, a second termination for achieving a breakdown voltage of a backward direction is formed in a first recess around an active region of the other main surface, and the high breakdown voltage of both forward and backward directions and high mass productivity are achieved.例文帳に追加

逆阻止半導体素子において、順方向耐圧達成用の第１のターミネーションのみを一方の主表面に形成し、逆方向耐圧達成用の第２のターミネーションは他方の主表面の活性領域の周囲に設けた第１の凹部の中に形成し、高い順逆両方向耐圧と高い量産性を実現する。 - 特許庁