mesfet structureとは 意味・読み方・使い方

A variable attenuator 1-1 is comprised of a variable attenuator main body 10 and a temperature compensating circuit 20, and the temperature compensating circuit 20 comprises a second MESFET 21 having the same structure as that of a first MESFET 11 in the variable attenuator body 10.例文帳に追加

この可変減衰器１−１は、可変減衰器本体１０と温度補償回路２０とでなり、可変減衰器本体１０の第１のＭＥＳＦＥＴ１１と同構造の第２のＭＥＳＦＥＴ２１を温度補償回路２０に設けた。 - 特許庁

To simplify the structure of an SiC semiconductor device having Schottky contact and ohmic contact on one major surface of a substrate such as a metal/semiconductor field effect transistor (MESFET), and also to provide a method for shortening its manufacturing steps.例文帳に追加

ＭＥＳＦＥＴのようなショットキー接触とオーミック接触を基板の一主面に有するＳｉＣ半導体装置の構造を簡素化すると共に、その製造工程を短縮化する技術を提供する。 - 特許庁

To provide a semiconductor device in which an MESFET of a developing BP-LDD structure can be formed, while avoiding a substantially increased number of manufacturing steps and suppressing reduction of a breakdown voltage in a Schottky junction, and also provide a method for manufacturing the device.例文帳に追加

製造工程を大幅に増加することなく、ショットキー接合部の耐圧低下を抑止しつつ、発展型ＢＰ−ＬＤＤ構造のＭＥＳＦＥＴを形成しうる半導体装置及びその製造方法を提供する。 - 特許庁