type B waveとは 意味・読み方・使い方

(b) The peak strength of phosphorus on the surface of the substrate by a wave dispersion-type X-ray measurement is 10-25 Kcps.例文帳に追加

ｂ．前記支持体上の表面の波長分散型Ｘ線測定による燐によるピーク強度が１０〜２５Ｋｃｐｓである。 - 特許庁

The broadcast receiver 100 includes an A system tuner part 103 of little power consumption and a B system tuner part 104 whose power consumption is larger but interference wave eliminating capability is higher compared to the A type tuner part 103.例文帳に追加

放送受信装置１００は、消費電力の少ないＡ方式チューナ部１０３と、これに比較して消費電力は多いが妨害波排除能力の高いＢ方式チューナ部１０４を有する。 - 特許庁

The separated slab wave-guide 3b is fixed, and the separated slab wave-guide 3a side is slide-moved in the directions of arrows A, B along the section 8 by using expansion/contraction of a high thermal expansion coefficient member 7 according to a used environmental temperature change, and the temperature dependent fluctuation of respective light transmission central wavelengths of the array wave-guide type diffraction grating is reduced.例文帳に追加

分離スラブ導波路３ｂを固定し、使用環境温度変化に応じた高熱膨張係数部材７の膨張収縮を利用して分離スラブ導波路３ａ側を前記切断面８に沿って矢印Ａ，Ｂ方向にスライド移動させ、アレイ導波路型回折格子の各光透過中心波長の温度依存変動を低減する。 - 特許庁

The method is to form a semiconductor material of low-resistance p-type compounds on a substrate, and includes (a) a stage which forms a semiconductor material of p-type impurity-doped group III-V compounds on the substrate and (b) a stage which carries out a micro wave processing on the semiconductor material of the p-type impurity-doped group III-V compounds.例文帳に追加

基板上に低抵抗ｐ型化合物半導体材料を形成する方法であって、（ａ）基板上にｐ型不純物ドープIII-V族化合物半導体材料を形成する段階と、（ｂ）ｐ型不純物ドープIII-V族化合物半導体材料上に対してマイクロ波処理を施す段階と、を備えたことをを特徴とする。 - 特許庁

This electrostatic capacity type distance sensor consists of a transmitting electrode 1 radiating electromagnetic wave, a receiving electrode 2 detecting intensity of an electromagnetic field, electrostatic capacitance converting means 51A, B, C, D converting into electrostatic capacitance between the obstruction and the receiving electrode, and distance converting means 31A, B, C, D converting output of the electrostatic capacitance converting means into the distance.例文帳に追加

静電容量型距離センサは、電磁波を放射する送信電極1と、該電磁界の強度を検出する受信電極2と、障害物と前記受信電極間の静電容量に変換する静電容量変換手段51Ａ，Ｂ，Ｃ，Ｄ，と、該静電容量変換手段の出力を距離に換算する距離換算手段31Ａ，Ｂ，Ｃ，Ｄ，とで構成される。 - 特許庁