「あいのうた」に関連した英語例文の一覧と使い方 - Weblio英語例文検索

ＩＩＩ族窒化物半導体例文帳に追加

GROUP III NITRIDE SEMICONDUCTOR - 特許庁

ＩＩＩ族窒化物半導体素子例文帳に追加

GROUP III NITRIDE SEMICONDUCTOR ELEMENT - 特許庁

ＩＩＩ族窒化物半導体装置例文帳に追加

GROUP III NITRIDE SEMICONDUCTOR DEVICE - 特許庁

ＩＩＩ族窒化物半導体光素子例文帳に追加

GROUP-III NITRIDE SEMICONDUCTOR OPTICAL DEVICE - 特許庁

ＩＩＩ族窒化物半導体積層物例文帳に追加

GROUP III NITRIDE SEMICONDUCTOR LAMINATE - 特許庁

ＩＩＩ族窒化物半導体素子およびＩＩＩ族窒化物半導体基板例文帳に追加

GROUP III NITRIDE SEMICONDUCTOR DEVICE AND GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE - 特許庁

ＩＩＩ族窒化物膜の製造方法及びＩＩＩ族窒化物半導体素子例文帳に追加

MANUFACTURING METHOD OF GROUP III NITRIDE FILM, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE - 特許庁

この輸液バッグ包装体は［Ｉ］［ＩＩ］又は［ＩＩＩ］の構成を有する。例文帳に追加

This infusion solution bag package has the following [I], [II], or [III] configurations. - 特許庁

互いに相手や相手の物を食う例文帳に追加

to consume each other as well as each other's things  - EDR日英対訳辞書

ＩＩＩ族窒化物半導体結晶、ＩＩＩ族窒化物半導体基板、半導体装置およびＩＩＩ族窒化物半導体結晶の製造方法例文帳に追加

GROUP III NITRIDE SEMICONDUCTOR CRYSTAL, MANUFACTURING METHOD THEREOF, GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR DEVICE - 特許庁

ＩＩＩ族窒化物半導体の製造方法、ＩＩＩ族窒化物半導体発光素子の製造方法、ＩＩＩ族窒化物半導体製造装置、ＩＩＩ族窒化物半導体及びＩＩＩ族窒化物半導体発光素子、並びにランプ例文帳に追加

METHOD FOR MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR, METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE OF GROUP-III NITRIDE SEMICONDUCTOR, APPARATUS FOR MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR, GROUP-III NITRIDE SEMICONDUCTOR AND LIGHT-EMITTING DEVICE OF GROUP-III NITRIDE SEMICONDUCTOR, AND LAMP - 特許庁

ＩＩＩＡ族及びＩＩＩＢ族のホウ素並びに金属を含む蛍光体例文帳に追加

PHOSPHOR CONTAINING BORON AND METAL BELONGING TO GROUPS IIIA AND IIIB - 特許庁

ああいうタイプの人がいくらもある例文帳に追加

There are many men of his type.  - 斎藤和英大辞典

無数に穴のあいた状態例文帳に追加

the state of being filled with holes  - EDR日英対訳辞書

ＩＩＩ族窒化物半導体層の形成方法、ＩＩＩ族窒化物半導体基板の製造方法およびＩＩＩ族窒化物半導体基板例文帳に追加

METHOD FOR FORMING GROUP III NITRIDE SEMICONDUCTOR LAYER, METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE, AND GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE - 特許庁

ＩＩＩ族窒化物半導体層の形成方法、ＩＩＩ族窒化物半導体基板の製造方法、ＩＩＩ族窒化物半導体基板例文帳に追加

METHOD OF FORMING GROUP III NITRIDE SEMICONDUCTOR LAYER, METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE, AND GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE - 特許庁

ＩＩＩ族窒化物半導体の表面処理方法、ＩＩＩ族窒化物半導体及びその製造方法及びＩＩＩ族窒化物半導体構造物例文帳に追加

SURFACE TREATMENT METHOD FOR GROUP III NITRIDE SEMICONDUCTOR, GROUP III NITRIDE SEMICONDUCTOR, MANUFACTURING METHOD THEREOF, AND GROUP III NITRIDE SEMICONDUCTOR STRUCTURE - 特許庁

ＩＩＩ族窒化物半導体の製造方法、ＩＩＩ族窒化物半導体発光素子の製造方法、及びＩＩＩ族窒化物半導体発光素子例文帳に追加

METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR, METHOD FOR PRODUCING GROUP III NITRIDE LIGHT EMISSION ELEMENT, AND GROUP III NITRIDE LIGHT EMISSION ELEMENT - 特許庁

転瞬の間に例文帳に追加

in a moment―in a twinkling―in the twinkling of eye  - 斎藤和英大辞典

ＩＩＩ族窒化物半導体成長用の下地基板およびＩＩＩ族窒化物半導体の成長方法例文帳に追加

GROUND SUBSTRATE FOR GROWING GROUP III NITRIDE SEMICONDUCTOR AND METHOD FOR GROWING GROUP III NITRIDE SEMICONDUCTOR - 特許庁

ＩＩＩ族窒化物半導体を有する半導体素子例文帳に追加

SEMICONDUCTOR DEVICE HAVING GROUP III NITRIDE SEMICONDUCTOR - 特許庁

ＩＩＩ−Ｖ族窒化物半導体を用いた半導体装置例文帳に追加

SEMICONDUCTOR DEVICE USING GROUP III-V NITRIDE SEMICONDUCTOR - 特許庁

ＩＩＩ族窒化物半導体層を含む半導体装置例文帳に追加

SEMICONDUCTOR DEVICE INCLUDING GROUP-III NITRIDE SEMICONDUCTOR LAYER - 特許庁

ｎ型ＩＩＩ族窒化物半導体積層構造体例文帳に追加

N-TYPE GROUP III NITRIDE SEMICONDUCTOR LAMINATION STRUCTURE - 特許庁

ＩＩＩ族窒化物化合物半導体積層構造体例文帳に追加

GROUP III NITRIDE COMPOUND SEMICONDUCTOR LAMINATED STRUCTURE - 特許庁

ＩＩＩ族窒化物半導体積層構造体例文帳に追加

GROUP III NITRIDE SEMICONDUCTOR LAMINATE STRUCTURE - 特許庁

イオン注入ＩＩＩ族窒化物半導体基板、ＩＩＩ族窒化物半導体層接合基板およびＩＩＩ族窒化物半導体デバイスの製造方法例文帳に追加

MANUFACTURING METHOD OF ION IMPLANTATION GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE, GROUP III NITRIDE SEMICONDUCTOR LAYER JUNCTION SUBSTRATE, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE - 特許庁

ＩＩＩ族窒化物半導体複合基板、ＩＩＩ族窒化物半導体基板、及びＩＩＩ族窒化物半導体複合基板の製造方法例文帳に追加

GROUP-III NITRIDE SEMICONDUCTOR COMPOSITE SUBSTRATE, GROUP-III NITRIDE SEMICONDUCTOR SUBSTRATE, AND METHOD OF MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR COMPOSITE SUBSTRATE - 特許庁

ＩＩＩ族窒化物半導体素子、多波長発光ＩＩＩ族窒化物半導体層及び多波長発光ＩＩＩ族窒化物半導体層の形成方法例文帳に追加

GROUP III NITRIDE SEMICONDUCTOR DEVICE, MULTI-WAVELENGTH LIGHT EMITTING GROUP III NITRIDE SEMICONDUCTOR LAYER, AND METHOD FOR MANUFACTURING MULTI-WAVELENGTH LIGHT EMITTING GROUP III NITRIDE SEMICONDUCTOR LAYER - 特許庁

ＩＩＩ族窒化物半導体薄膜、ＩＩＩ族窒化物半導体発光素子およびＩＩＩ族窒化物半導体薄膜の製造方法例文帳に追加

GROUP III NITRIDE SEMICONDUCTOR THIN FILM, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR THIN FILM - 特許庁

ＩＩＩ族窒化物半導体素子、ＩＩＩ族窒化物半導体基板およびＩＩＩ族窒化物半導体素子の製造方法例文帳に追加

GROUP III NITRIDE SEMICONDUCTOR ELEMENT, MANUFACTURING METHOD THEREOF AND GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE - 特許庁

ＩＩＩ族窒化物半導体成長用基板、ＩＩＩ族窒化物半導体自立基板、ＩＩＩ族窒化物半導体素子、ならびに、これらの製造方法例文帳に追加

SUBSTRATE FOR GROWING GROUP-III NITRIDE SEMICONDUCTOR, GROUP-III NITRIDE SEMICONDUCTOR DEVICE, FREE-STANDING SUBSTRATE FOR GROUP-III NITRIDE SEMICONDUCTOR, AND METHOD FOR MANUFACTURING THE SAME - 特許庁

新規のＩＩ−ＩＩＩ−Ｎ半導体ナノ粒子および当該ＩＩ−ＩＩＩ−Ｎ半導体ナノ粒子の製造方法を提供する。例文帳に追加

To provide a new II-III-N semiconductor nanoparticle, and a method of manufacturing the same. - 特許庁

ＩＩＩ族窒化物結晶の作製装置、ＩＩＩ族窒化物結晶の積層構造体の作製方法及びＩＩＩ族窒化物結晶の積層構造体例文帳に追加

APPARATUS FOR MANUFACTURING GROUP III NITRIDE CRYSTAL, LAMINATION STRUCTURE OF GROUP III NITRIDE CRYSTAL AND MANUFACTURING METHOD THEREOF - 特許庁

キノリン−４−イル誘導体ＩＩ例文帳に追加

QUINOLIN-4-YL DERIVATIVE II - 特許庁

ＩＩＩ族窒化物半導体結晶、その製造方法、ＩＩＩ族窒化物半導体エピタキシャルウェーハ例文帳に追加

GROUP III NITRIDE SEMICONDUCTOR CRYSTAL, MANUFACTURING METHOD THEREOF, AND GROUP III NITRIDE SEMICONDUCTOR EPITAXIAL WAFER - 特許庁

ＩＩＩ族窒化物半導体結晶の製造方法及びＩＩＩ族窒化物半導体結晶例文帳に追加

METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR CRYSTAL AND GROUP III NITRIDE SEMICONDUCTOR CRYSTAL - 特許庁

ＩＩＩ族窒化物半導体結晶基板、ＩＩＩ族窒化物半導体デバイスおよびその製造方法例文帳に追加

GROUP III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE, GROUP III NITRIDE SEMICONDUCTOR DEVICE, AND ITS MANUFACTURE METHOD - 特許庁

ＩＩＩ−Ｖ族窒化物半導体基板及びＩＩＩ−Ｖ族窒化物半導体基板の製造方法例文帳に追加

GROUP III-V NITRIDE SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING GROUP III-V NITRIDE SEMICONDUCTOR SUBSTRATE - 特許庁

ＩＩＩ−Ｖ族窒化物半導体の製造方法およびＩＩＩ−Ｖ族窒化物半導体例文帳に追加

METHOD OF MANUFACTURING III-V NITRIDE SEMICONDUCTOR AND III-V NITRIDE SEMICONDUCTOR - 特許庁

ＩＩＩ族窒化物半導体基板およびＩＩＩ族窒化物半導体基板の製造方法例文帳に追加

GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD OF GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE - 特許庁

ＩＩＩ族窒化物半導体基板の製造方法、及びＩＩＩ族窒化物半導体基板例文帳に追加

GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD, AND GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE - 特許庁

ＩＩＩ族窒化物半導体およびその製造方法、およびＩＩＩ族窒化物半導体装置例文帳に追加

GROUP III NITRIDE SEMICONDUCTOR, ITS MANUFACTURE AND GROUP III NITRIDE SEMICONDUCTOR DEVICE - 特許庁

ＩＩＩ族窒化物半導体の製造方法及びＩＩＩ族窒化物半導体素子例文帳に追加

METHOD FOR MANUFACTURING III NITRIDE SEMICONDUCTOR AND III NITRIDE SEMICONDUCTOR ELEMENT - 特許庁

ＩＩＩ族窒化物半導体基板の製造方法およびＩＩＩ族窒化物半導体基板例文帳に追加

METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE - 特許庁