When the concentration of fuel is changed, the electric load value of the load at that time and the output value consumed by the load are measured, and the critical concentration value of the fuel and the critical output value of the load are calculated using the first curve equation and the second curve equation.例文帳に追加

該燃料の濃度に変化が生じた時、この時の負荷の電気的負荷値と負荷が消耗する出力値を測定し、該第一曲線方程式と該第二曲線方程式を利用し、該燃料の臨界濃度値と負荷の臨界出力値を算出する。 - 特許庁

To provide a method for producing a semiconductor device, and the semiconductor device in which high strain relaxation rate is attained even in a strained SiGe film having thickness equal to or thinner than critical film thickness and high Ge concentration formed on a semiconductor substrate, through dislocation density is reduced, undulation of a second SiGe film surface formed on it is inhibited and smoothness can be enhanced.例文帳に追加

半導体基板上に形成された高濃度のＧｅ濃度を有する臨界膜厚以下の歪ＳｉＧｅ膜においても高い歪緩和度を達成し、貫通転位密度を低減し、その上に形成される第２のＳｉＧｅ膜表面のうねりを抑制し、平滑性を向上させることができる半導体装置の製造方法及び半導体装置の提供。 - 特許庁