膜トポグラフィーの英語

測定部１１１は、特に、第１受光部２３からの第１受光信号に基づき、眼光学特性測定を行い、第２受光部３５からの第２受光信号に基づき、角膜トポグラフィー測定を行う。例文帳に追加

A measuring part 111 measures optical characteristics of the eye especially on the basis of the first light detection signal from the first light detection part 23 and performs cornea topographic measurement on the basis of the second light detection signal from the second light detection part 35. - 特許庁

測定部１１１は、特に、第１受光部２３からの第１受光信号に基づき、眼光学特性測定を行い、第２受光部３５からの第２受光信号に基づき、角膜トポグラフィー測定を行う。例文帳に追加

A measuring unit 111 measures ocular optical characteristics based on a first photodetection signal from a first photodetector 23, and measures a cornea topography based on a second photodetection signal from a second photodetector 35. - 特許庁

ＳＴＩデバイス素子分離手法を実施するに際し、一般のミラー（鏡面研磨）シリコンウエハ表面に存在するナノトポグラフィー領域の微小うねりを簡易に、かつ、有効に減少させ、前記ＣＭＰ研磨処理により形成する薄膜の膜厚ムラの発現を減少させ、ＣＭＰ工程におけるパフォーマンス低下を誘引することがないナノトポグラフィー平坦性が改善されたシリコン単結晶ウエハの製造方法を提供する。例文帳に追加

To provide the manufacturing method of a silicon single crystal wafer that simply and effectively reduces minute waviness in a nanotopography region existing on the surface of a general (mirror surface-polishing) silicon wafer, reduces the manifestation of film thickness irregularity of a thin film by the CMP polishing treatment, and has improved nanotopography flatness where reduction in performance in the CMP process is not induced when performing the STI device element separation method. - 特許庁