Torrsとは 意味・読み方・使い方

Etching in the reaction chamber is conducted in a temperature range of approximately 600-800°C in a decompression atmosphere of approximately 10 Torrs and in a gas, in which hydrochloric acid is diluted with hydrogen.例文帳に追加

反応室内でのエッチングは１０Ｔｏｒｒ程度の減圧雰囲気、塩酸を水素で希釈したガス中で６００℃〜８００℃程度の温度領域で行う。 - 特許庁

To provide an electron beam gun reducing an arc under an operation pressure of the order of 10-3 Torrs used for a reactive and oxide evaporation and having a filament emitter not deteriorated by a reaction with oxygen.例文帳に追加

反応性及び酸化物蒸着で用いられる１０^-3トール程度の操作圧力におけるアークを低減し、フィラメントエミッタが酸素との反応により劣化しない電子ビーム銃を提供する。 - 特許庁

The reflow treatment is performed in a decompressed atmosphere of 1 to 100 Torrs or thereabout, and besides the mixed gas containing hydrogen of 30 to 70% and nitrogen or the mixed gas containing hydrogen of 30 to 70% or thereabout and inert gas is used for the decompressed atmosphere.例文帳に追加

リフロー処理は１〜１００Ｔｏｒｒ程度の減圧雰囲気中で行い、さらに、その雰囲気には水素を３０〜７０％程度含有する窒素との混合ガスまたは水素を３０〜７０％程度含有する不活性ガスとの混合ガスを用いる。 - 特許庁

At the formation of a tantalum oxide film in a method for manufacturing semiconductor device, a first tantalum oxide film 17 is formed in a first film-forming stage under such a film-forming condition that the film- forming temperature and pressure are respectively set at about 510°C and about 3.0 Torrs, and an oxygen gas is added to the atmosphere.例文帳に追加

容量絶縁膜としての酸化タンタル膜を成膜するにあたり、第１成膜段階として、成膜温度を略５１０℃に設定し、高い成膜圧力である略３．０Ｔｏｒｒに設定して、酸素ガスを添加した成膜条件で第１酸化タンタル膜１７を成膜する。 - 特許庁

The heat- treatment is performed under the conditions that the partial pressure of O2 gas with respect to O2 atmosphere or partial pressure of N2O gas with respect to N2O atmosphere is 250 Torrs or higher, the temperature is in the range of 350-450°C, and the heat-treatment time is in the range of 60-300 seconds.例文帳に追加

ウエハの熱処理は、Ｏ__2 雰囲気中のＯ_2 ガスの分圧、又はＮ_2 Ｏ雰囲気中のＮ_2 Ｏガスの分圧が２５０Torr以上で、３５０℃以上４５０℃以下の範囲の温度で、かつ６０秒以上３００秒以下の範囲の熱処理時間で行う。 - 特許庁

A silicon oxidizing film is formed on the silicon substrate and treated thermally in an NH_3 gas atmosphere at a pressure of at most 50 Torrs, at a temperature of at least 1,000°C for at most 60 sec, so that nitrogen is introduced in the silicon oxidizing film, and the silicon oxidizing and nitriding film is formed.例文帳に追加

シリコン基板上にシリコン酸化膜を形成し、前記シリコン酸化膜に対して圧力５０Ｔｏｒｒ以下のＮＨ_3ガス雰囲気中１０００℃以上の温度で６０秒以下の熱処理を施すことによって前記シリコン酸化膜に窒素を導入してシリコン酸窒化膜を形成する。 - 特許庁

Then the varnish 11b is arranged, in an atmosphere where a mixed gas comprising Ar gas and NF_3 gas with their mixture ratio set to approximate nine to one is depressurized to approximate 10 Torrs, heated and kept at approximately 400°C, and irradiated by an electron beam of dose of approximate 1,000 μC/cm^2 for about 30 minutes.例文帳に追加

続けて、約９：１の混合比に設定されたＡｒガスおよびＮＦ_3ガスからなる混合ガスを約10Torrに減圧した雰囲気下にワニス１１ｂを配置し、約４００℃に加熱して保持しつつ、照射量が約1000μC/cm^2の電子線をワニス１１ｂに向けて約３０分間照射する。 - 特許庁