| 例文 (999件) |
基磨の部分一致の例文一覧と使い方
該当件数 : 3662件
基板研磨装置、基板研磨方法、基板受取方法例文帳に追加
SUBSTRATE POLISHING DEVICE, SUBSTRATE POLISHING METHOD, AND SUBSTRATE RECEIVING METHOD - 特許庁
基板研磨装置、及びそれを利用する基板研磨方法例文帳に追加
SUBSTRATE POLISHING APPARATUS, AND METHOD OF POLISHING SUBSTRATE USING THE SAME - 特許庁
基板研磨装置、基板研磨方法及び半導体装置例文帳に追加
SUBSTRATE LAPPING APPARATUS, SUBSTRATE LAPPING METHOD AND SEMICONDUCTOR DEVICE - 特許庁
ガラス基板研磨用キャリア及びガラス基板研磨装置例文帳に追加
CARRIER FOR POLISHING GLASS SUBSTRATE, AND GLASS SUBSTRATE POLISHING DEVICE - 特許庁
基板研磨方法および基板研磨管理システム例文帳に追加
SUBSTRATE POLISHING METHOD AND SUBSTRATE POLISHING MANAGEMENT SYSTEM - 特許庁
基板研磨装置及びそれを用いた基板研磨方法例文帳に追加
SUBSTRATE POLISHING DEVICE AND SUBSTRATE POLISHING METHOD USING THE SAME - 特許庁
基板研磨装置及び基板研磨方法例文帳に追加
BASE BOARD POLISHING DEVICE AND BASE BOARD POLISHING METHOD - 特許庁
研磨パッドのドレッシング方法、研磨パッドのドレッシング装置、基板研磨装置、及び基板研磨方法例文帳に追加
METHOD AND APPARATUS FOR DRESSING POLISHING PAD, SUBSTRATE POLISHING APPARATUS, AND SUBSTRATE POLISHING METHOD - 特許庁
炭化珪素単結晶基板の研磨用水系研磨スラリー及び研磨法。例文帳に追加
AQUEOUS POLISHING SLURRY FOR POLISHING SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND POLISHING METHOD - 特許庁
酸化セリウム研磨剤及びこの研磨剤を用いた基板の研磨法例文帳に追加
CERIUM OXIDE ABRASIVE, AND POLISHING METHOD FOR SUBSTRATE USING THIS ABRASIVE - 特許庁
研磨助剤、研磨剤組成物、および半導体基板の研磨方法例文帳に追加
POLISHING AID, POLISHING AGENT COMPOSITION, AND METHOD FOR POLISHING SEMICONDUCTOR SUBSTRATE - 特許庁
アルミニウム膜研磨用研磨液及び基板の研磨方法例文帳に追加
POLISHING LIQUID FOR POLISHING ALUMINUM FILM, AND POLISHING METHOD OF SUBSTRATE - 特許庁
研磨装置及びこの研磨装置を用いた電子機器基板研磨方法例文帳に追加
GRINDING DEVICE AND METHOD OF GRINDING ELECTRONIC DEVICE SUBSTRATE USING THE GRINDING DEVICE - 特許庁
研磨剤用添加剤、研磨剤、基板の研磨方法及び電子部品例文帳に追加
ADDITIVES FOR ABRASIVES, ABRASIVES, METHOD FOR POLISHING SUBSTRATE AND ELECTRONIC COMPONENT - 特許庁
研磨定盤の研磨布に前記の金属用研磨液を供給しながら、被研磨膜を有する基板を研磨布に押圧した状態で研磨定盤と基板を相対的に動かすことによって被研磨膜を研磨する研磨方法。例文帳に追加
The method for polishing a film to be polished, comprises supplying the polishing liquid for the metal to the polishing cloth of a polishing board and simultaneously relatively moving the polishing board and a substrate in a state that the substrate having a film to be polished is pressed to the polishing cloth. - 特許庁
研磨定盤の研磨布上に前記の金属用研磨液を供給しながら、被研磨膜を有する基板を研磨布に押圧した状態で研磨定盤と基板を相対的に動かすことによって被研磨膜を研磨する研磨方法。例文帳に追加
This method enables the polishing of a film to be polished by moving a polishing plate and a substrate having the film to be polished relatively in the state of pressurizing the substrate to a polishing cloth of the polishing plate while feeding the metal-polishing solution onto the polishing cloth. - 特許庁
酸化セリウム研磨剤及び基板の研磨方法例文帳に追加
OXIDE CERIUM POLISHING AGENT AND POLISHING METHOD FOR SUBSTRATE - 特許庁
酸化セリウム研磨剤および基板の研磨法例文帳に追加
CERIUM OXIDE POLISHING AGENT AND METHOD OF POLISHING SUBSTRATE - 特許庁
酸化セリウム研磨剤及び基板の研磨法例文帳に追加
CERIUM OXIDE POLISHING MATERIAL AND SUBSTRATE-POLISHING METHOD - 特許庁
酸化セリウム研磨剤、基板の研磨法及び半導体装置例文帳に追加
CERIUM OXIDE ABRASIVE, POLISHING OF SUBSTRATE AND SEMICONDUCTOR DEVICE - 特許庁
半導体研磨装置及び半導体基板の研磨方法例文帳に追加
SEMICONDUCTOR POLISHING APPARATUS AND POLISHING OF SEMICONDUCTOR SUBSTRATE - 特許庁
炭化シリコン結晶基板の研磨方法及び研磨装置例文帳に追加
POLISHING METHOD AND POLISHING APPARATUS OF SILICON CARBIDE CRYSTAL SUBSTRATE - 特許庁
半導体基板の研磨方法および研磨治具例文帳に追加
POLISHING METHOD AND POLISHING JIG OF SEMICONDUCTOR SUBSTRATE - 特許庁
| 例文 (999件) |
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