半導体領域の英語

半導体装置は、第１半導体領域、第２半導体領域、第３半導体領域、第４半導体領域、ゲート領域、ゲート絶縁膜及び電界緩和領域を備える。例文帳に追加

A semiconductor device comprises a first semiconductor region, second semiconductor regions, third semiconductor regions, fourth semiconductor regions, gate regions, gate insulating films, and electric-field relaxation regions. - 特許庁

第１導電型の領域は、第１の半導体領域と複数の第２の半導体領域とを有する。例文帳に追加

The first-conductivity-type region has a first semiconductor region and a plurality of second semiconductor regions. - 特許庁

ゲート領域は、第２半導体領域、第３半導体領域及び第４半導体領域を第２方向に貫通するトレンチ内に設けられる。例文帳に追加

Each of the gate regions is provided in a trench penetrating through the second semiconductor region, the third semiconductor region, and the fourth semiconductor region in a second direction. - 特許庁

ｎ型半導体領域１２は、ｎ- 半導体領域１２ａ、ｎバッファ領域１２ｂ、ｎ^+ 半導体領域１２ｃから構成される。例文帳に追加

The n-type semiconductor region 12 is constituted of an n^- semiconductor region 12a, an n buffer region 12b, and an n^+ semiconductor region 12c. - 特許庁

第一の半導体端子領域及び半導体接触領域１４３に第一型半導体を、第二の半導体端子領域及び半導体接触領域に第二型半導体を印刷してダイオードを形成する。例文帳に追加

A first semiconductor is printed in the first semiconductor terminal area and the semiconductor contract area 143, and a second semiconductor is printed in the second semiconductor terminal area and the semiconductor contact area so that a diode can be formed. - 特許庁

本発明の縦型半導体装置２は、半導体装置２の表面側から、第１半導体領域１０、第２半導体領域１２、第３半導体領域１６、第４半導体領域１８の順に積層されている。例文帳に追加

This vertical semiconductor device 2 is obtained by laminating a first semiconductor region 10, a second semiconductor area 12, a third semiconductor region 16 and a fourth semiconductor region 18 from the side of the front surface of the device 2. - 特許庁

または、第１の半導体領域と第２の半導体領域との間に、第１の半導体領域側から第２の半導体領域側に向けて不純物濃度を漸次低下させた中間半導体領域を設ける。例文帳に追加

Or, an intermediate region which is gradually decreased in impurity concentration starting from the first semiconductor region toward the second semiconductor region is provided between the first semiconductor region and the second semiconductor region. - 特許庁

本発明の半導体装置１０は、第１半導体領域１４と第２半導体領域１６と第３半導体領域３２と第４半導体領域３４とトレンチゲート３６と内部絶縁体領域３０を有する。例文帳に追加

The semiconductor device 10 comprises: a first semiconductor region 14; a second semiconductor region 16; a third semiconductor region 32; a fourth semiconductor region 34; a trench gate 36; and an internal insulator region 30. - 特許庁