The density of the NN pair and the NNO compound are found based on the intensity of the first to the fourth absorption peak.例文帳に追加

第１乃至第４の吸収ピークの強度に基づき、ＮＮペア及びＮＮＯ複合体の密度を算出する。 - 特許庁

An infrared absorption spectrum of the silicon crystal is measured and the intensity of a third absorption peak corresponding to the NN pair and the intensity of a fourth absorption peak corresponding to the NNO compound are found from the absorption spectrum.例文帳に追加

シリコン結晶の赤外線吸収スペクトルを測定し、吸収スペクトルから、ＮＮペアに対応する第３の吸収ピークの強度及びＮＮＯ複合体に対応する第４の吸収ピークの強度を求める。 - 特許庁

An infrared absorption spectrum of the silicon crystal is measured and the intensity of a first absorption peak corresponding to an NN pair and the intensity of a second absorption peak corresponding to an NNO compound are found from an absorption spectrum.例文帳に追加

シリコン結晶の赤外線吸収スペクトルを測定し、吸収スペクトルから、ＮＮペアに対応する第１の吸収ピークの強度及びＮＮＯ複合体に対応する第２の吸収ピークの強度を求める。 - 特許庁

The concentration of the NNO complexes and an absorption efficient acquired from the second absorption peak value from the plurality of silicon crystals are used to determine a relation between them.例文帳に追加

複数のシリコン結晶の第２の吸収ピーク強度から求められた吸収係数とＮＮＯ複合体の密度とから、両者の関係を求める。 - 特許庁

Each silicon crystal is heated at a first temperature in order to bring an in-crystal defective reaction into its quasi thermal equilibrium state, and an infrared absorption spectrum of each silicon crystal is measured while keeping an in-crystal defect concentration in the quasi thermal equilibrium state, and a first absorption peak value resulting from NN pairs and a second absorption peak value resulting from NNO complexes are acquired.例文帳に追加

シリコン結晶の各々を、第１の温度まで加熱して、結晶内欠陥反応を準熱平衡状態まで至らしめ、シリコン結晶の各々について、準熱平衡状態における結晶内欠陥濃度を維持した状態で赤外線吸収スペクトルを測定し、ＮＮペアに起因する第１の吸収ピーク強度及びＮＮＯ複合体に起因する第２の吸収ピーク強度を求める。 - 特許庁