high impurity concentrationとは 意味・読み方・使い方

The channel region comprises a low impurity concentration region 5 and a high impurity concentration region 6 which is formed in a region outside the low impurity concentration region 5 and has a higher impurity concentration than the low impurity concentration region.例文帳に追加

そのチャネル領域は、低濃度領域５と、低濃度領域５の外側の領域に形成され、低濃度領域５の不純物濃度より高い不純物濃度を有する高濃度領域６とから形成されている。 - 特許庁

The channel region 27 includes a pair of low-concentration impurity regions 25 with relatively smaller impurity concentration, and a high-concentration impurity region 26 that is located while being held between the low-concentration impurity regions 25 and has relatively large impurity concentration.例文帳に追加

チャネル領域２７は、相対的に不純物濃度が小さい１対の低濃度不純物領域２５と、低濃度不純物領域２５に挟まれて位置し、相対的に不純物濃度が大きい高濃度不純物領域２６とを含む。 - 特許庁

The source and drain regions 31 include a p-type low concentration impurity region 29 contain relatively low impurity concentration of the first conductivity type and a p-type high concentration impurity region 30 containing relatively high p-type impurity concentration.例文帳に追加

ソースおよびドレイン領域３１は、相対的に第１導電型の不純物濃度が小さいｐ型低濃度不純物領域２９と、相対的にｐ型不純物濃度が大きいｐ型高濃度不純物領域３０とを含む。 - 特許庁

The second conductive type low concentration impurity layer 160 expands the second conductive type high concentration impurity layer 170 in depth direction and channel length direction so that it has an impurity concentration lower than the second conductive type high concentration impurity layer 170.例文帳に追加

第２導電型低濃度不純物層１６０は、第２導電型高濃度不純物層１７０を深さ方向及びチャネル長方向に拡張し、第２導電型高濃度不純物層１７０より不純物濃度が低濃度である。 - 特許庁

A source diffusion layer consists of a low-concentration impurity diffusion layer 5s and a high-concentration impurity diffusion layer 6s, while a drain diffusion layer consists of a low-concentration impurity diffusion layer 5d and a high-concentration impurity diffusion layer 6d.例文帳に追加

ソース拡散層とドレイン拡散層は、ともに低濃度不純物拡散層５ｓ，５ｄと高濃度不純物拡散層６ｓ，６ｄとからなっている。 - 特許庁

At a position located on the outer side of the second sidewall 23A and deeper than the second high-concentration impurity region 32A, a low-concentration impurity region 33A having impurity concentration lower than that of the first high-concentration impurity region 31A and the second high-concentration impurity region 32A is formed.例文帳に追加

第２サイドウォール２３Ａよりも外側で且つ第２高濃度不純物領域３２Ａよりも深い位置には、第１高濃度不純物領域３１Ａ及び第２高濃度不純物領域３２Ａよりも不純物濃度が低い、低濃度不純物領域３３Ａが形成されている。 - 特許庁

The n-type high concentration diffusion layer 10 has an impurity concentration higher than that of the n-type low concentration diffusion layer 9.例文帳に追加

ｎ型高濃度拡散層１０は、ｎ型低濃度拡散層９よりも不純物濃度が高い。 - 特許庁