high permittivity substrateとは 意味・読み方・使い方

A gate insulating film 5 formed as a high-permittivity film and a polysilicon film are formed on a semiconductor substrate 1.例文帳に追加

半導体基板１上に高誘電率膜よりなるゲート絶縁膜５とポリシリコン膜を形成する。 - 特許庁

To provide a method for manufacturing a low temperature calcinated substrate where a capacitor of a high capacity composed of high permittivity ceramic is built in.例文帳に追加

高誘電率セラミックから成る高容量のキャパシタが内蔵された低温同時焼成基板の製造方法を提供する。 - 特許庁

A high-permittivity gate insulating film 110 is formed on a substrate 101, and a gate electrode 111a is formed thereon.例文帳に追加

基板１０１上に高誘電率ゲート絶縁膜１１０、その上にゲート電極１１１ａを形成する。 - 特許庁

The composite substrate 1 is provided with an LTCC substrate 2, a high-permittivity ceramic substrate 3 having a permittivity higher than that of the LTCC substrate 2, and a resin layer 4 including a thermoplastic resin for bonding the ceramic substrate 2 and 3.例文帳に追加

複合基板１は、ＬＴＣＣ基板２と、このＬＴＣＣ基板２と比べて誘電率の高い高誘電率セラミック基板３と、これらセラミック基板２，３を接合する熱可塑性樹脂を含む樹脂層４とを備える複合基板１及びその製造方法。 - 特許庁

To form a gate insulating film of high permittivity which is high in an average nitrogen concentration and low in the nitrogen concentration near the interface of a silicon substrate.例文帳に追加

平均窒素濃度が高くかつシリコン基板界面近傍の窒素濃度が低い高誘電率のゲート絶縁膜を形成する。 - 特許庁

As a gate insulating film 3, a first high permittivity film 4 which contains nitrogen and metal from the side of a semiconductor substrate 1, and a second high permittivity film 5 which is different in the composition of the first high permittivity film 4, are laminated to form an insulating film, which is used for constituting an insulated gate type transistor.例文帳に追加

ゲート絶縁膜３として、半導体基板１の側から窒素と金属を含んだ第１の高誘電率膜４と、第１の高誘電率膜４とは組成の異なる第２の高誘電率膜５を積層した絶縁膜を用いて絶縁ゲート型トランジスタを構成する。 - 特許庁

For instance, a lower electrode layer 102 is formed on a semiconductor substrate 101, and then a high-permittivity insulating film 103 is formed thereon.例文帳に追加

例えば、半導体基板１０１上に下部電極層１０２を形成し、次いで高誘電率絶縁膜１０３を形成する。 - 特許庁

The gate insulating film 30 of the PchTr comprises a low-permittivity film 31 formed on the side of the substrate 10 and a high-permittivity film 32 formed on the side of the gate electrode 40.例文帳に追加

ＰｃｈＴｒのゲート絶縁膜３０は、半導体基板１０側に形成された低誘電率膜３１と、ゲート電極４０側に形成された高誘電率膜３２とから構成されている。 - 特許庁