電荷半径の英語

第２の領域の素子分離層２３Ｂの上面は、第１の領域の素子分離層２３Ａの上面より高く、第２の領域の電荷蓄積層３２Ｂは、上部の角の曲率半径が、第３の領域の電荷蓄積層４３よりも大きい。例文帳に追加

An upper surface of an element isolation layer 23B in the second region is higher than that of an element isolation layer 23A in the first region, and the curvature radius of an upper corner of a charge storage layer 32B in the second region is larger than that of a charge storage layer 43 in the third region. - 特許庁

半導体製造装置用部材の角部を半径０．１ｍｍ以上のＲ面取り加工処理し、かつ表面粗さＲａ１．６μｍ以下に研磨加工処理することで、角部における電荷の集中を抑制し、アーキングの発生を防止する。例文帳に追加

Radius of at least 0.1mm carries out R chamfering processing of the corners of semiconductor manufacturing equipment structural, and sharpening process to at most surface roughness Ra 1.6 μm is performed, thereby restraining concentration of electric charge in corners and preventing generation of arcing. - 特許庁

ブレード先端部が現像剤担持体とは逆方向に長手方向全域で折り曲げられている現像剤量規制ブレードを製造するにあたって、ブレード部材の電荷制御面の表面性を保持しつつ、曲げ角度、曲げ位置、曲げ半径を精度良く加工できる方法を提供する。例文帳に追加

To provide a method in which a developer amount regulating blade having a blade front end part folded in the opposite direction from a developer carrier over the entire lengthwise region can be processed to a precise bending angle, bending position, and bending radius while surface properties of a charge control surface of a blade member are held when the developer amount regulating blade is manufactured. - 特許庁

板バネ等の弾性体１４の先端に配置される検出用探針１０は曲率半径ｒが１５ｎｍ≦ｒ≦０．５ｃｍの大きさを有し、かつ、その表面が金属及びその金属間化合物、酸化物半導体、電子供与体となりうる有機化合物、電子受容体となりうる有機化合物等からなる易電荷移動物質３２により被覆されている。例文帳に追加

A detecting probe 10 disposed at the front end of an elastic body 14 such as a leaf spring has a radius (r) of curvature of 15 nm≤r≤0.5 cm, and its surface is covered with an easy charge-transfer substance 32 consisting of metal, intermetallic compound, oxide semiconductor, organic compunds capable of becoming electron donor and acceptor, respectively, and the like. - 特許庁