LOW SUPERSATURATIONとは 意味・読み方・使い方

METHOD AND INSTRUMENT FOR MEASURING CLOUD PARTICLE NUCLEUS OF LOW SUPERSATURATION例文帳に追加

低過飽和雲粒核測定方法およびその装置 - 特許庁

Furthermore, the crystal can be grown by using a low supersaturation solution in which the crystal is hardly generated by a natural nucleus, and the growth of a crystal (impurity crystal) at a position other than the crystal growth part can be suppressed.例文帳に追加

また、自然核による結晶が発生しにくい低過飽和溶液を用いて結晶成長を行うことができ、成長部位以外での結晶成長（雑晶）を抑制することができる。 - 特許庁

To form an antireflection layer, having a low refractive index on the surface of a substrate and to provide a low reflective substrate, having high transmittance for visible rays by the method of supersaturation precipitation that the substrate is brought into contact with a silicon oxide supersaturated aqueous solution of hydrosilicofluoric acid to precipitate a silicon dioxide film on the substrate surface.例文帳に追加

珪弗化水素酸の酸化珪素飽和水溶液と基板とを接触させて基板表面に二酸化珪素被膜を析出させる過飽和析出法により、基板表面に低屈折率の反射防止層を形成して可視光透過率の高い低反射基板を提供する。 - 特許庁

In the method for manufacturing the low reflective substrate, by specifying film-forming rate of the silicon dioxide film to 20 to 100 nm/h in the process of forming a silicon dioxide film by the method of supersaturation precipitation, so as to control the fluorine content in the silicon dioxide film and to form an antireflection film having ≤1.435 of refractive index.例文帳に追加

過飽和析出法による二酸化珪素被膜の形成に当たり、二酸化珪素被膜の成膜速度を２０〜１００ｎｍ／時とすることにより該二酸化珪素被膜中の弗素含有量を調整し、屈折率１．４３５以下の反射防止層を形成する低反射基板の製造方法。 - 特許庁

To provide a thin film forming method which dissolves a raw material in a low temperature/high pressure high density supercritical state in order to supply the raw material having a higher concentration than that in a CVD method and bringing a solute dissolved in the supercritical state to a supersaturated state but not to be in a beam state while keeping the supercritical state without realizing a large degree of supersaturation due to rapid quenching.例文帳に追加

本願発明の課題は、ＣＶＤ法よりも高濃度の原料を基板上に供給するために、低温・高圧の高密度の超臨界状態によって原料を溶解し、超臨界状態において、溶解した溶質を、急速急冷による大きな過飽和度を実現することなく、超臨界状態を維持したまま過飽和状態とし、ビーム状態にしないことである。 - 特許庁