PMOS FETとは 意味・読み方・使い方

語源

p +‎ MOSFET, where n denotes "positive" or "p-type".

発音

IPA: /ˈpiːˌɛmˌoʊˌɛsˌɛfˌiːˌtiː/

名詞

pMOSFET (plural pMOSFETs)

1. (electronics, semiconductors) A type of metal–oxide–semiconductor field-effect transistor (MOSFET) that utilizes an p-type channel, conducting when a voltage voltage below a threshold is applied to the gate relative to the source. It is commonly used in complementary metal–oxide–semiconductor (CMOS) technology alongside nMOSFETs.
   • 1990 March, Katsushi Asahina, Shuji Murakami, Katsuki Ichinose, Fuyumi Minami, Yasuhiro Funakoshi, “A 256-K 13-Nanosecond CMOS SRAM”, in Electronics & Communications in Japan, Part 2: Electronics, volume 73, number 3, pages 44-45:

     As shown in Fig. 2, the source-drain breakdown characteristics of PMOSFETS exhibit an increase in the drain current under the same drain voltage as the gate length increases.

   • 2025 April, A. Tahiat, B. Cretu, A. Veloso, E. Simoen, “Investigation of DC and low frequency noise parameters of junctionless GAA Si VNW pMOSFETs in the temperature range from 80 K to 340 K”, in Solid-State Electronics‎, volume 225, page 1:

     In this article, the performance of vertical nanowire Gate All Around (GAA) junction-less pMOSFETs on SOI having an asymmetric architecture was investigated experimentally based on an in-depth study of their electrical characteristics.

関連する語

• nMOSFET