interstitial growthとは 意味・読み方・使い方

Thereby, the silicon single crystal 9 vibrates during growth, an interstitial silicon concentration is increased, and the diffusion of the interstitial silicon having a long diffusion length is accelerated even when the pulling speed is increased.例文帳に追加

すると、引き上げ速度を上げても、シリコン単結晶９が、その育成中に振動して格子間シリコン濃度を増し、拡散長の長い格子間シリコンの拡散が促進される。 - 特許庁

By this method, a high-quality growth layer of a PbTe compound semiconductor can be obtained which generates no precipitation of interstitial atoms at low temperatures.例文帳に追加

低温で格子間原子の析出を生じない高品位のＰｂＴｅ系化合物半導体の成長層が得られる。 - 特許庁

To provide a silicon single crystal production process which enables growth of a silicon single crystal bar having high uniformity in interstitial oxygen concentration in the growth direction of the single crystal being grown, in a high yield and with high productivity, in a transverse magnetic field-applied CZ(Czochralski) method.例文帳に追加

横磁場を印加するＣＺ法において、成長単結晶の成長方向の格子間酸素濃度の均一性が高いシリコン単結晶棒を高生産性、高歩留りで育成できるシリコン単結晶の製造方法を提供する。 - 特許庁

To provide a silicon single crystal production process which enables production of a silicon single crystal bar having high uniformity in interstitial oxygen concentration in the direction of the growth axis of the single crystal, in a high yield and with high productivity, in a transverse magnetic field-applied CZ(Czochralski) method, and also to provide a device for the production process.例文帳に追加

横磁場を印加するＣＺ法において、単結晶の成長軸方向の格子間酸素濃度の均一性が高い単結晶棒を高生産性、高歩留りで製造できるシリコン単結晶の製造方法と製造装置を提供する。 - 特許庁

Moreover, since the substrate is performed a normal epitaxial growth as one containing the high-concentration interstitial oxygen and the region 3 can be formed by heat-treating the substrate in the oxidizing atmosphere, the significant reduction in the cost of the substrate can be achieved even though this manufacturing method of this substrate is compared with an SIMOX method needed for conducting high-energy ion implantation of oxygen.例文帳に追加

また、基板を高濃度の格子間酸素を含むものとして通常のエピタキシャル成長を行い、酸化性雰囲気中で熱処理することでＳｉＯ_2の層状領域３を形成できるため、酸素の高エネルギーイオン注入の必要性があるＳＩＭＯＸ法と比較しても、大幅なコスト低減を達成することができる。 - 特許庁