intrinsic junctionとは 意味・読み方・使い方

To obtain appropriate junction interface structure where the crystallization ration of a doped layer is equal to or more than that of an intrinsic layer.例文帳に追加

ドープ層の結晶化率が真性層の結晶化率以上である適切な接合界面構造を得る。 - 特許庁

Consequently, the emitter/base intrinsic junction width can be reduced to a submicron magnitude, so that consumption power of an IC can be remarkably reduced.例文帳に追加

これによりエミッタ／ペース真性接合幅がサブミクロン以下にまで縮小でき、ＩＣの消費電流の大幅な低減が図れる。 - 特許庁

An edge input photodiode 10 is provided with a laminate in which an intrinsic semiconductor 16 is formed between p-n junction layers 14, 15 comprising n-type and p-type semiconductors containing InGaAsP.例文帳に追加

ｎ型およびｐ型のInGaAsPから成る半導体ｐｎ接合層１４、１５間に真性半導体層１６を有する積層体を備える端面受光型フォトダイオード１０。 - 特許庁

A plurality of intrinsic Josephson junction devices 42 and 43 are mounted on the integrated circuit board 40 containing the antennas 41 and choke circuits so that this quantum voltage reference device may generate a reference voltage upon receiving a milliwave/sub-milliwave.例文帳に追加

複数個の固有ジョセフソン接合装置４２，４３をアンテナ４１及びチョーク回路を含む集積回路基板４０に搭載してミリ波・サブミリ波を受信し、標準電圧を生成させる。 - 特許庁

Hereby, the distance between the intrinsic base 18 and the base lead layer 7 is reduced, and junction region is increased, whereby the base resistance of the splicing section can be reduced, and the dispersion of the base resistance can be reduced.例文帳に追加

これによって、真性ベース１８とベース引き出し層７の間の距離が縮り、また接合面積が増えることによりつなぎ部分のベース抵抗が低減できベース抵抗のばらつきが低減できる。 - 特許庁

An intrinsic Josephson superconducting tunnel junction element is provided comprising an oxide superconductor represented by a general expression (I); Bi2-zPbzSr2Can(1-x)RnxCun+1O2n+6 (n≥1, 0<x≤0.2, 0≤z≤1, R is rare earth element).例文帳に追加

一般式（I）；Ｂｉ2-zＰｂzＳｒ2Ｃａn(1-x)ＲnxＣｕn+1Ｏ2n+6 (n≧1, 0＜x≦0.2 , 0 ≦z≦1 Ｒ；希土類元素）で示される酸化物超伝導体を含有する固有ジョセフセン型超伝導トンネル接合素子。 - 特許庁

To improve photoelectric conversion efficiency by reducing recombination of optically formed carriers in a junction, in a photovoltaic device wherein thin films 12, 13 of intrinsic amorphous semiconductor are inserted in the junction of a crystal based semiconductor substrate 11 and an amorphous semiconductor film 14 which have relation of mutually opposite conductivity types.例文帳に追加

互いに逆導電型の関係を有する結晶系半導体基板１１と非晶質半導体膜１４の接合部に、薄膜の真性非晶質半導体膜１２，１３が挿入された光起電力装置において、接合部における光生成キャリアの再結合を低減し、光電変換効率を向上させる。 - 特許庁

The THz band electromagnetic wave oscillating apparatus is formed of a single crystal material of a superconducting BSCCO structure including a multilayered intrinsic Josephson-junction, and utilizes the high order harmonics of the basic wave of the THz band electromagnetic wave oscillated by the single crystal material.例文帳に追加

多重積層型固有ジョセフソン接合を有する超伝導体ＢＳＣＣＯ構造の単結晶体により形成され、前記単結晶体が発振するテラヘルツ帯域電磁波の基本波の高次調波を利用することを特徴とする。 - 特許庁