「under-approximating」に関連した英語例文の一覧と使い方 - Weblio英語例文検索

A data storing part 1 stores the three-dimensional(3D) coordinates of a control point on a curve and outputs the stored coordinates to a curve approximating part 2 under control by a control part 7.例文帳に追加

データ記憶部１は、曲線の制御点の３次元座標を記憶し、制御部７の制御により、曲線近似部２に出力する。 - 特許庁

To provide a method of detecting crystal defects of a semiconductor and a method of observing crystal defects, whereby the defects can be evaluated conveniently under conditions of approximating actual defects.例文帳に追加

簡便かつ実際の欠陥に近い状態で欠陥の評価を行うことの可能な半導体の結晶欠陥の検出方法及び結晶欠陥の観察方法を提供すること。 - 特許庁

To obtain knowledge regarding impurity concentration that closely approximates that in actual wiring structure, by measuring precisely the impurity concentration in a wiring conductive material, under a condition approximating the actual wiring structure, using a sample of relatively simple constitution, and to make the knowledge reflect on actual wiring formation.例文帳に追加

比較的簡易な構成の試料を用いて、実際の配線構造に近似する状況で配線導電材料の不純物濃度を精度良く測定し、実際の配線構造に極めて近い不純物濃度の知見を得ることを可能とし、当該知見を実際の配線形成に反映させる。 - 特許庁

Under the condition that a thin film forming surface 12 of a substrate 1 is provided facing an insulation film 21 formed on the surface of a quartz plate 2, the insulation film 21 is closely brought into contact with the thin film forming surface 12 by approximating the substrate 1 and quartz plate 2 to each other (step S3: close contact process).例文帳に追加

石英板２の表面に形成された絶縁膜２１に対して基板１の薄膜形成面１２を対向配置させた状態のまま、基板１および石英板２に相互に近接移動させて絶縁膜２１を薄膜形成面１２に密着させる（ステップＳ３：密着処理）。 - 特許庁