転位散乱の英語

赤外散乱体や転位クラスター等と呼ばれるgrown-in欠陥の密度の低い単結晶を育成することのできる単結晶引き上げ装置を提供すること。例文帳に追加

To provide a single crystal pulling-up device with which the single crystal low in the density of grown-in defects called as infrared scatter or dislocation cluster can be grown. - 特許庁

ＧａＡｓ単結晶は、２００００ｃｍ^-2以下の平均転位密度を有し、赤外線散乱原因となる粒径１μｍ以上の析出粒子を含んでいないことを特徴としている。例文帳に追加

The GaAs single crystal has ≤20,000 cm^-2 average dislocation density and no crystallized particles having ≥1 μm particle diameter which cause IR scattering. - 特許庁

ＣＺ法にて転位クラスターや赤外線散乱体のようなGrown-in欠陥を、できるだけ少なくしたウェーハを採取できる、径の大きい長尺の高品質単結晶の育成方法の提供。例文帳に追加

To provide a method for growing a high-quality single crystal having a large diameter and long length, capable of collecting a wafer having grown-in defects such as metastasis dislocation cluster and infrared scatter reduced as much as possible by a CZ method. - 特許庁

ＣＺ法にて転位クラスターや赤外線散乱体のようなGrown-in欠陥を、できるだけ少なくしたウェーハを採取できる、大径長尺の高品質単結晶の育成方法の提供。例文帳に追加

To provide a method for growing a high quality long single silicon crystal having a large diameter, making it possible to obtain by CZ method a wafer in which defects such as rearrangement clusters and IR light-scattering sites are reduced as much as possible. - 特許庁

ＣＺ法にて転位クラスターや赤外線散乱体のようなGrown-in欠陥を、できるだけ少なくしたウェーハを採取できる大径長尺の高品質単結晶の育成方法の提供。例文帳に追加

To provide a method for growing a high-quality single crystal capable of providing a wafer having minimized Grown-in defects such as dislocation clusters and infrared scatterers, and having a large diameter and a long length by a CZ(Czochralski) method. - 特許庁

偏光板をその回転位置に位置決めして表面検査を行うことによって、被検査物１１から反射する楕円偏光の反射光を有効に除去することが可能となり、異物からの散乱光を高精度に検出することができる。例文帳に追加

With the polarizing plate 32 set in the rotating position, the surface is inspected, so that the elliptically polarized reflected light from the subject of inspection 11 can be effectively eliminated to enable scattered light from foreign matter to be detected with high accuracy. - 特許庁