group IB elementとは 意味・読み方・使い方

The film 13 is a semiconductor thin film which functions as a light absorbing layer, and contains a group Ib element, a group IIIb element, and a group VIb element.例文帳に追加

化合物半導体薄膜１３は、光吸収層として機能する半導体薄膜であり、Ｉｂ族元素、IIIｂ族元素およびVIｂ族元素を含む。 - 特許庁

As for a phase-changing optical recording medium, a recording layer 4 is made of phase-changing recording materials containing a Ib group element, a IIIb group element, an Sb element and a Te element.例文帳に追加

相変化光記録媒体１に関し、記録層４は、Ｉｂ族元素、 IIIｂ族元素、Ｓｂ元素及びＴｅ元素を有する相変化記録材料による。 - 特許庁

To provide a solar battery equipped with a light absorption layer consisting of a IB-IIIB-VIB semiconductor of group IB element rich composition.例文帳に追加

ＩＢ族元素リッチ組成のＩＢ−IIIＢ−VIＢ半導体からなる光吸収層を備えた太陽電池を提供する。 - 特許庁

To improve energy conversion efficiency of a solar cell that is provided with a semiconductor film containing a Ib group element, a group IIIb element and a VIa group element as an optical absorption layer.例文帳に追加

Ｉｂ族元素、IIIｂ族元素及びVIａ族元素を含有する半導体膜を光吸収層として備えた太陽電池におけるエネルギー変換効率を向上させる。 - 特許庁

The film 14 contains a group Ib element, a group IIIb element, and a group VIb element and also contains sulfur at a higher composition ratio than that of the film 13.例文帳に追加

化合物半導体薄膜１４は、Ｉｂ族元素、IIIｂ族元素およびVIｂ族元素を含み、化合物半導体薄膜１３よりも高い組成比で硫黄を含む。 - 特許庁

The thin film 12 contains a compound semiconductor layer 12b, which is arranged so as to come into contact with the first electrode film 11 an contains a group Ib element, a group IIIb element, and a group VIb element.例文帳に追加

薄膜１２は、第１の電極膜１１と接触するように配置された、Ｉｂ族元素とIIIｂ族元素とVIｂ族元素とを含む化合物半導体層１２ｂを含む。 - 特許庁

The solar cell has a photoelectric conversion layer including a semiconductor layer including an Ib group element, a IIIb group element and a VIb group element on an aluminum substrate provided with an insulative anodic oxidation film.例文帳に追加

絶縁性の陽極酸化膜を有するアルミニウム基板上に、Ｉｂ族元素とIIIｂ族元素とVIｂ族元素とからなる半導体層を含む光電変換層を有する、太陽電池。 - 特許庁

The method of manufacturing a solar cell includes: a sputtering process for sputtering a target including a group Ib element and a target including a group IIIb element in an atmosphere including Se, and forming a layer including the group Ib element, group IIIb element, and Se on a substrate; and a heat-treatment process for heating the layer.例文帳に追加

本発明の太陽電池の製造方法は、Ｉｂ族元素を含むターゲット及びＩＩＩｂ族元素を含むターゲットを、Ｓｅを含む雰囲気中でスパッタして、Ｉｂ族元素、ＩＩＩｂ族元素及びＳｅを含む層を基板上に形成するスパッタリング工程と、層を加熱する熱処理工程と、を備える。 - 特許庁