magnetic semiconductor quantum wellとは 意味・読み方・使い方

A first magnetic semiconductor multiple quantum well structure 2, a non-magnetic semiconductor quantum well structure 3 and a second magnetic semiconductor multiple quantum well structure 4 are formed in this order on a semiconductor substrate 1.例文帳に追加

半導体基板１上に、第１の磁性半導体多重量子井戸構造２、非磁性半導体量子井戸構造３、及び第２の磁性半導体多重量子井戸構造４を順次形成する。 - 特許庁

The p-i-n-type circularly polarized light modulating light emitting semiconductor element is equipped with a quantum well structure formed of a non-magnetic semiconductor layer, and a magnetic semiconductor layer which has a small band gap and is provided adjacent or adjoining to the barrier layer of the quantum well structure.例文帳に追加

非磁性半導体層からなる量子井戸構造と、該構造の障壁層に近接、又は、隣接して、バンドギャップの小さい磁性半導体層を備えることを特徴とするｐ−ｉ−ｎ型円偏光変調発光半導体素子。 - 特許庁

To provide a method of high-speed and high-sensitivity reading-out of magnetization information by using light transition using the quantum well level in thin metallic film of magnetic metal, noble metal, magnetic metal, semiconductor, ferromagnetic metal, etc., or the semiconductor quantum well level held between ferromagnetic metals.例文帳に追加

磁性金属、貴金属、磁性金属、半導体、強磁性金属等の金属薄膜中の量子井戸準位または強磁性体に挟まれた半導体量子井戸準位を使った光遷移を用い、磁化情報の高速高感度読み出し方法を提供する。 - 特許庁

To provide a magnetic semiconductor device that is lattice-matched with a substrate and forms a quantum well layer or a ferromagnetic electrode constituted from II-IV-V_2 group compound magnetic semiconductor material whose Curie temperature Tc is the room temperature.例文帳に追加

基板と格子整合し、キュリー温度Ｔｃが室温であるＩＩ−ＩＶ−Ｖ_２族化合物磁性半導体材料で量子井戸層あるいは強磁性電極を構成した磁性半導体素子を提供する。 - 特許庁

A magnetic semiconductor device 10 is made up of a substrate 11, composed of InP, a quantum well layer 13 composed of ZnSnAs_2 to which Mn is added and crystal-grown onto the substrate 11, and a set of barrier layers 12 and 14 composed of InAlAs and/or InGaAs, crystal-grown on the substrate 11, and sandwiching the quantum well layers 13.例文帳に追加

磁性半導体素子１０は、ＩｎＰからなる基板１１と、Ｍｎが添加されたＺｎＳｎＡｓ_２からなりかつ基板１１の上に結晶成長された量子井戸層１３と、ＩｎＡｌＡｓ及び／又はＩｎＧａＡｓからなり基板１１の上に結晶成長されかつ量子井戸層１３を挟持する一組の障壁層１２，１４と、を備える。 - 特許庁

At this time, the quantum well level generated in the nonmagnetic noble metal or the semiconductor layer is changed in confinement conditions by a change in the relative magnetization directions of the magnetic metallic layers with each other and the dielectric constant is changed and therefore the change in the relative magnetization directions of the magnetic metals with each other can be measured by the absorption, reflection and transmission intensity of light.例文帳に追加

この時、非磁性貴金属または半導体層中に生じる量子井戸準位は、磁性金属層同士の相対的な磁化方向の変化により閉じ込め条件が変わり、誘電率が変化するため、それにより磁性金属同士の相対的な磁化の向きの変化を光の吸収、反射、透過強度により測定することができる。 - 特許庁