photocurrent multiplicationとは 意味・読み方・使い方

PHOTOCURRENT MULTIPLICATION ELEMENT AND PHOTOTRANSISTOR例文帳に追加

光電流増倍素子及びフォトトランジスタ - 特許庁

PHOTOCURRENT MULTIPLYING DEVICE AND METHOD FOR CONTROLLING ITS MULTIPLICATION FACTOR例文帳に追加

光電流増倍装置及びその増倍率制御方法 - 特許庁

To set the multiplication factor of a photocurrent multiplying device to a desired value.例文帳に追加

光電流増倍装置の増倍率を所望の値に設定する。 - 特許庁

When excitation light is injected in the photocurrent multiplying layer 2 from the Au electrode 6 side, photocurrent multiplication occurs in a boundary between the photocurrent multiplication layer 2 and the Au electrode 6.例文帳に追加

励起光をＡｕ電極６側から光電流増倍層２に入射させると、光電流増倍層２とＡｕ電極６の界面で光電流増倍が起こる。 - 特許庁

The multiplication factor changes depending upon a mixture ratio of Me-PTC and PhEt-PTC of which the photocurrent multiplication layer 2 is composed.例文帳に追加

増倍率は、光電流増倍層２を構成するＭｅ−ＰＴＣとＰｈＥｔ−ＰＴＣの混合比率に依存して変化する。 - 特許庁

Vacuum evaporation films composed of perylene pigment and exhibiting multiplication of photocurrent as organic semiconductor thin films 3 and 5 are formed to have a film thickness of 500 nm, respectively, and a stripe base electrode 4 is interposed between.例文帳に追加

有機半導体薄膜３，５として光電流増倍を示すペリレン顔料からなる真空蒸着膜をそれぞれに膜厚５００ｎｍで形成し、その間にストライプ状ベース電極４を介在させた。 - 特許庁

In a low-voltage region before multiplication develops, since a hot carrier flows inside the first embedded layer 110a formed in the vicinity of the first mesa 109, a flat part of multiplication factor (M)=1 appears in the photocurrent-voltage characteristic, and a leakage bus of current becomes less apt to be formed at an interface between a passivation membrane 113 and the second embedded layer 110b.例文帳に追加

これにより、増倍開始前の低電圧領域において、第１メサ１０９の近傍に形成された第１埋込み層１１０ａ内をホットキャリアが流れるので、光電流−電圧特性に増倍率（Ｍ）＝１の平坦部が現れるようになり、かつ保護膜１１３と第２埋込み層１１０ｂとの界面に電流のリークバスが形成され難くなる。 - 特許庁