半絶縁多結晶の英語

非単結晶絶縁膜上または非単結晶絶縁基板上に、非晶質または多結晶等の非単結晶半導体薄膜を形成してエネルギーを加えて結晶化する際に、不規則な核発生を抑制し、かつ、結晶成長し易い方位を有する結晶粒を制御して成長し、大略結晶方位の揃った大面積の結晶性半導体膜を得る。例文帳に追加

To obtain a crystalline semiconductor film having a wide area, such that when an energy is applied to crystallize a nonsingle-crystal semiconductor film, such as amorphous or polycrystalline films formed on a nonsingle-crystal insulation film or nonsingle-crystal insulation substrate, the irregular nucleus growth is suppressed, crystal grains having an orientation easy to grow the crystal are controlled, so as to make the crystal orientation approximately uniform. - 特許庁

単結晶若しくは多結晶半導体基板から分離した単結晶若しくは多結晶半導体層を光電変換層とする光電変換装置であって、当該半導体層を絶縁表面を有する基板若しくは絶縁基板に接合させる所謂ＳＯＩ構造を備えたことを要旨とする。例文帳に追加

The photovoltaic device using a single crystal or polycrystalline semiconductor layer separated from a single crystal or polycrystalline semiconductor substrate as a photovoltaic layer has a so-called SOI (silicon on insulator) structure in which the semiconductor layer is bonded to a substrate having an insulating surface or an insulating substrate. - 特許庁

本願発明によれば、絶縁体基板上に、粒界、粒径、結晶方位を制御でき、結晶化の仮定で生じる膜のラフネスと結晶欠陥を低減した高品質の多結晶半導体膜を有する半導体装置を得ることが出来る。例文帳に追加

The high-quality polycrystalline semiconductor film can control a grain boundary, a grain size, and a crystal orientation and can reduce the roughness of a film generated in the process of crystallization, and a crystal defect. - 特許庁

透明絶縁基板１上に少なくとも第１の金属膜２、陽極酸化膜３、第１の絶縁膜４、多結晶シリコン膜５、第２の絶縁膜６、及び、第２の金属膜７を順に積層して薄膜半導体装置を構成する。例文帳に追加

At least, a first metallic film 2, an anode oxide film 3, a first insulating film 4, a polycrystalline silicon film 5, a second insulating film 6, and a second metallic film 7 are successively laminated on a transparent insulating substrate 1. - 特許庁

シリコン基板１表面にゲート絶縁膜２を形成する工程と、ゲート絶縁膜２表面に水酸基３を吸着させた後に化学気相成長法でゲート絶縁膜２上に多結晶半導体膜である多結晶シリコン膜４を成膜する工程とを含む。例文帳に追加

The manufacturing method of a semiconductor device comprises a process where a gate insulating film 2 is formed on the surface of a silicon substrate 1 and a process that after hydroxyl groups 3 are adsorbed on the surface of the film 2, a polycrystalline silicon film 4, which is a polycrystalline semiconductor film is formed on the film 2 by a chemical phase growth method. - 特許庁

本発明の製造方法は、プレーナ型受光素子の高耐圧用パシベーション膜として半絶縁性酸素ドープ多結晶シリコン膜を有する双方向フォトサイリスタの製造方法であって、半絶縁性酸素ドープ多結晶シリコン膜の屈折率を測定する工程と、測定した屈折率に基き半絶縁性酸素ドープ多結晶シリコン膜の酸素濃度を推定する工程とを備える。例文帳に追加

The method of manufacturing a bidirectional photo thyristor having a semiinsulating oxygen-doped polycrystalline silicon film as a high voltage withstanding passivation film of a planar type light receiving device comprises a step of measuring the refractive index of the semiinsulating oxygen-doped polycrystalline silicon film, and a step of estimating the oxygen concentration of the semiinsulating oxygen-doped polycrystalline silicon film, based on the measured refractive index. - 特許庁

絶縁基板（１００）上に形成された多結晶の半導体薄膜（２）を有する薄膜トランジスタを備えた半導体装置である。例文帳に追加

The semiconductor device is provided with a thin film transistor having a polycrystalline semiconductor thin film (2) formed on an insulating substrate (100). - 特許庁

不純物濃度のばらつきの少ない不純物ドープ多結晶半導体層を絶縁基板上に有する半導体基板の製造方法を提供する。例文帳に追加

To provide a method of manufacturing a semiconductor substrate having an impurity-doped polycrystalline semiconductor layer having little variation in impurity concentration on an insulation substrate. - 特許庁