Bridgman methodとは 意味・読み方・使い方

To easily take a gallium arsenide single crystal out of a growth vessel after crystal growth in a vertical growth method such as vertical Bridgman method, a vertical temperature gradient solidification method or the like.例文帳に追加

垂直ブリッジマン法や垂直温度勾配凝固法等の縦型成長法において、結晶成長終了後の砒化ガリウム単結晶を成長用容器から容易に取り出すことを可能とする。 - 特許庁

To inhibit dislocation due to thermal strain from being caused and to make a cooling rate high in a method for the production of compound semiconductor crystal using a vertical Bridgman method.例文帳に追加

垂直ブリッジマン法を用いた化合物半導体結晶の製造方法において、熱歪みによる転位発生の抑制と冷却速度の高速化を実現することを可能とする。 - 特許庁

To provide a crucible for pretreating a raw material to produce the high quality pretreated article of the raw material which is used when single crystals are produced by a crucible descending method (Bridgman method), a single crystal pulling method (Czochralski method) or the like.例文帳に追加

坩堝降下法（ブリッジマン法）や単結晶引上げ法（チョクラルスキー法）等の方法を用いて単結晶を製造する際に用いる原材料前処理品を高品質に製造するための原材料前処理用坩堝を提供する。 - 特許庁

To provide a compound semiconductor crystal production device effective in enhancing the growth rate of a seed crystal and increasing the length of a grown compound semiconductor single crystal, in a compound semiconductor crystal production process by a VB(vertical Bridgman) method.例文帳に追加

ＶＢ法による種結晶部の成長速度の高速化、結晶の長尺化に有効な化合物半導体結晶の製造を可能にすること。 - 特許庁

To provide a method for producing an La_3Ga_5SiO_14 single crystal by a Bridgman method in which the generation of a dissimilar phase or a crack at the time of growing the single crystal can be suppressed by preventing the deviance in the composition.例文帳に追加

組成ずれを防ぐことにより、単結晶育成時の異相やクラックの発生を抑制することができるブリッジマン法によるＬａ_３Ｇａ_５ＳｉＯ_１４単結晶の製造方法を提供する。 - 特許庁

To provide a new method by which a good quality lithium tetraborate single crystal which is free from a light-scattering material and suitable as an optical element can be grown by a vertical bridgman method.例文帳に追加

光学素子用として好適な、光散乱体を含まない極めて良質な四ほう酸リチウム単結晶を、垂直ブリッジマン法により育成させることができる新規な方法を提供する。 - 特許庁

To provide a method for producing a single crystal by which the single crystal having much less lattice defects in comparison with a single crystal produced by the conventional Bridgman method can be obtained and a single crystal with less segregation can be obtained even when the method is applied to produce the single crystal having a composite composition.例文帳に追加

従来のブリッヂマン法で製造した単結晶より格子欠陥が極めて少なく、かつ複合組成物の単結晶を製造する場合においても偏析の少ない単結晶を製造する方法を提供すること。 - 特許庁

The growth by a Bridgman method is carried out while controlling the amount of a raw material to be charged in the crucible so that 10 to 50% of a melt of the raw material is accommodated in the upper crucible part 1 when the raw material is melted.例文帳に追加

るつぼ内に投入する原料の量を、原料を溶融させた時の融液が上部るつぼ部品に１０〜５０％入る程度に規制しつつ、ブリッジマン育成を行なう。 - 特許庁